Datasheets
STP20NE06 by: STMicroelectronics

20A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

Part Details for STP20NE06 by STMicroelectronics

Overview of STP20NE06 by STMicroelectronics

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Part Details for STP20NE06

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STP20NE06 Part Data Attributes:

STP20NE06 STMicroelectronics
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STP20NE06 STMicroelectronics 20A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 100 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 70 W
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STP20NE06

This table gives cross-reference parts and alternative options found for STP20NE06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP20NE06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFZ24NPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier STP20NE06 vs IRFZ24NPBF
BUZ71 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation STP20NE06 vs BUZ71
BUZ71 17A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics STP20NE06 vs BUZ71
BUK453-60B TRANSISTOR 20 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors STP20NE06 vs BUK453-60B
BUZ71 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors STP20NE06 vs BUZ71
BUZ71 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited STP20NE06 vs BUZ71
SSP15N06 Power Field-Effect Transistor, 16A I(D), 60V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor STP20NE06 vs SSP15N06
HUF75307P3 Power Field-Effect Transistor, 13A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor STP20NE06 vs HUF75307P3
IRFZ24NPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG STP20NE06 vs IRFZ24NPBF
MTP15N05E 15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN Texas Instruments STP20NE06 vs MTP15N05E
Part Number Description Manufacturer Compare
BUZ71L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens STP20NE06 vs BUZ71L
MTD2N40E-T4 Power Field-Effect Transistor, 2A I(D), 400V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Motorola Semiconductor Products STP20NE06 vs MTD2N40E-T4
HUF75321D3S Power Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor STP20NE06 vs HUF75321D3S
2SK2412 20A, 60V, 0.095ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN Renesas Electronics Corporation STP20NE06 vs 2SK2412
IRFZ24N Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG STP20NE06 vs IRFZ24N
BUK7575-55A Power Field-Effect Transistor Nexperia STP20NE06 vs BUK7575-55A
PHB20N06T,118 N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin Nexperia STP20NE06 vs PHB20N06T,118
MTD2N40E-T4 2A, 400V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC STP20NE06 vs MTD2N40E-T4
MTD3055ET4 8 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 Motorola Mobility LLC STP20NE06 vs MTD3055ET4
BUZ71 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor STP20NE06 vs BUZ71

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