Datasheets
HUF75321D3S by:

Power Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Details for HUF75321D3S by Harris Semiconductor

Overview of HUF75321D3S by Harris Semiconductor

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Part Details for HUF75321D3S

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HUF75321D3S Part Data Attributes:

HUF75321D3S Harris Semiconductor
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HUF75321D3S Harris Semiconductor Power Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 20 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 55 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF75321D3S

This table gives cross-reference parts and alternative options found for HUF75321D3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75321D3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75321D3ST N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ, 2500-REEL onsemi HUF75321D3S vs HUF75321D3ST
HUF75321D3S Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUF75321D3S vs HUF75321D3S
HUF75321D3ST 20A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75321D3S vs HUF75321D3ST
HUF75321D3S_NL Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUF75321D3S vs HUF75321D3S_NL
HUF75321D3S 20A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75321D3S vs HUF75321D3S
HUF75321D3ST 20A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN Rochester Electronics LLC HUF75321D3S vs HUF75321D3ST
STD30NE06 30A, 60V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3 STMicroelectronics HUF75321D3S vs STD30NE06
HUF75321D3ST_NL Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation HUF75321D3S vs HUF75321D3ST_NL
Part Number Description Manufacturer Compare
BUZ71L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens HUF75321D3S vs BUZ71L
MTD2N40E-T4 Power Field-Effect Transistor, 2A I(D), 400V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Motorola Semiconductor Products HUF75321D3S vs MTD2N40E-T4
BUZ11A 26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics HUF75321D3S vs BUZ11A
MTD20N06VT4 20A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi HUF75321D3S vs MTD20N06VT4
STP20NE06L 20A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics HUF75321D3S vs STP20NE06L
934056247118 Power Field-Effect Transistor, 18A I(D), 55V, 0.086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Nexperia HUF75321D3S vs 934056247118
PHB21N06LT-T Power Field-Effect Transistor Nexperia HUF75321D3S vs PHB21N06LT-T
NTD3055L104G Single N-Channel Logic Level Power MOSFET 60V, 12A, 104mΩ, DPAK (SINGLE GAUGE) TO-252, 75-TUBE onsemi HUF75321D3S vs NTD3055L104G
RFD14N06L Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Harris Semiconductor HUF75321D3S vs RFD14N06L
PHD21N06LT Power Field-Effect Transistor Nexperia HUF75321D3S vs PHD21N06LT

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