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Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38K2702
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Newark | Mosfet, N-Ch, 55V, 17A, 175Deg C, 45W, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:17A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFZ24NPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.2870 / $0.7660 | Buy Now |
DISTI #
IRFZ24NPBF-ND
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DigiKey | MOSFET N-CH 55V 17A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
8556 In Stock |
|
$0.2293 / $0.6900 | Buy Now |
DISTI #
IRFZ24NPBF
|
Avnet Americas | Trans MOSFET N-CH 55V 17A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFZ24NPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube | 3396 |
|
$0.2118 / $0.2572 | Buy Now |
DISTI #
942-IRFZ24NPBF
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Mouser Electronics | MOSFET MOSFT 55V 17A 70mOhm 13.3nC RoHS: Compliant | 1560 |
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$0.2290 / $0.5700 | Buy Now |
DISTI #
E02:0323_00175165
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Arrow Electronics | Trans MOSFET N-CH Si 55V 17A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2415 | Europe - 4398 |
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$0.1627 / $0.4290 | Buy Now |
DISTI #
V99:2348_06392522
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Arrow Electronics | Trans MOSFET N-CH Si 55V 17A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2326 | Americas - 1565 |
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$0.2168 / $0.5076 | Buy Now |
DISTI #
V36:1790_06392522
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Arrow Electronics | Trans MOSFET N-CH Si 55V 17A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2328 | Americas - 336 |
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$0.2195 / $0.5550 | Buy Now |
DISTI #
70017049
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.07Ohm, ID 17A, TO-220AB, PD 45W, VGS +/-20V | Infineon IRFZ24NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 3 Weeks, 0 Days Container: Bulk | 0 |
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$0.6000 / $0.7000 | RFQ |
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Future Electronics | Single N-Channel 55 V 0.07 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks Container: Tube | 11850Tube |
|
$0.2100 / $0.2500 | Buy Now |
|
Future Electronics | Single N-Channel 55 V 0.07 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 1 Lead time: 10 Weeks Container: Tube | 250Tube |
|
$0.1530 / $0.1850 | Buy Now |
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IRFZ24NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFZ24NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 71 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.07 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 45 W | |
Pulsed Drain Current-Max (IDM) | 68 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFZ24NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ24NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BUZ71 | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | IRFZ24NPBF vs BUZ71 |
BUK453-60A | TRANSISTOR 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | IRFZ24NPBF vs BUK453-60A |
IRFZ24N,127 | IRFZ24N | NXP Semiconductors | IRFZ24NPBF vs IRFZ24N,127 |
BUZ71 | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRFZ24NPBF vs BUZ71 |
IRFZ24NPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRFZ24NPBF vs IRFZ24NPBF |
HUF75307P3 | 15A, 55V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRFZ24NPBF vs HUF75307P3 |
BUZ71 | 12A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRFZ24NPBF vs BUZ71 |
BUZ71S2 | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Siemens | IRFZ24NPBF vs BUZ71S2 |
IRFZ24N | 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | NXP Semiconductors | IRFZ24NPBF vs IRFZ24N |
HUF75307P3 | Power Field-Effect Transistor, 15A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | IRFZ24NPBF vs HUF75307P3 |