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N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29AK3508
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Newark | Mosfet Rohs Compliant: Yes |Nexperia PHB20N06T,118 Min Qty: 4800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5060 | Buy Now |
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Rochester Electronics | PHB20N06T - 20.3A, 55V, 0.075ohm, N-Channel Power MOSFET, D2PAK ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 73 |
|
$0.3331 / $0.3919 | Buy Now |
DISTI #
PHB20N06T.118
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TME | Transistor: N-MOSFET, unipolar, 55V, 14.3A, Idm: 81A, 62W Min Qty: 1 | 786 |
|
$0.5460 / $0.8230 | Buy Now |
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PHB20N06T,118
Nexperia
Buy Now
Datasheet
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Compare Parts:
PHB20N06T,118
Nexperia
N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | D2PAK | |
Package Description | PLASTIC, D2PAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT404 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 30.3 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 20.3 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 81 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for PHB20N06T,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHB20N06T,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FQB20N06L | Power Field-Effect Transistor, 21A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | PHB20N06T,118 vs FQB20N06L |
934056615118 | Power Field-Effect Transistor | Nexperia | PHB20N06T,118 vs 934056615118 |
PHB20N06T | TRANSISTOR 20.3 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | NXP Semiconductors | PHB20N06T,118 vs PHB20N06T |