Datasheets
MTD3055ET4 by:

8 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3

Part Details for MTD3055ET4 by Motorola Mobility LLC

Overview of MTD3055ET4 by Motorola Mobility LLC

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Part Details for MTD3055ET4

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MTD3055ET4 Part Data Attributes

MTD3055ET4 Motorola Mobility LLC
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MTD3055ET4 Motorola Mobility LLC 8 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Manufacturer Package Code CASE 369A-13
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for MTD3055ET4

This table gives cross-reference parts and alternative options found for MTD3055ET4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD3055ET4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MTD3055EL-1 10A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 Motorola Mobility LLC MTD3055ET4 vs MTD3055EL-1
MTD1N50E 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC MTD3055ET4 vs MTD1N50E
MTD20N06HDL-1 20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369-07, DPAK-3 Motorola Mobility LLC MTD3055ET4 vs MTD20N06HDL-1
MTD1N50E1 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi MTD3055ET4 vs MTD1N50E1
MTD3055V-1 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3 onsemi MTD3055ET4 vs MTD3055V-1
MTD20N06HDL1 20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369-07, DPAK-3 Motorola Mobility LLC MTD3055ET4 vs MTD20N06HDL1
MTD2N40E-T4 2A, 400V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC MTD3055ET4 vs MTD2N40E-T4
MTD2N40ET4 2A, 400V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC MTD3055ET4 vs MTD2N40ET4
MTD3055EL-1 Power Field-Effect Transistor, 10A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 Motorola Semiconductor Products MTD3055ET4 vs MTD3055EL-1
MTD1N50ET4 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC MTD3055ET4 vs MTD1N50ET4
Part Number Description Manufacturer Compare
BUZ71L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens MTD3055ET4 vs BUZ71L
HUF76429D3ST Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation MTD3055ET4 vs HUF76429D3ST
HUF75309P3 Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation MTD3055ET4 vs HUF75309P3
NTD18N06T4G Power MOSFET 60V 18A 60 mOhm Single N-Channel DPAK, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi MTD3055ET4 vs NTD18N06T4G
IRF9Z34NPBF Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG MTD3055ET4 vs IRF9Z34NPBF
BUZ71L 12A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC MTD3055ET4 vs BUZ71L
BUZ71S2 Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens MTD3055ET4 vs BUZ71S2
FQB20N06L Power Field-Effect Transistor, 21A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation MTD3055ET4 vs FQB20N06L
FQD24N08TF Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation MTD3055ET4 vs FQD24N08TF
HUF76423D3ST Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation MTD3055ET4 vs HUF76423D3ST

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