Datasheets
SPB18P06P by:

Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

Part Details for SPB18P06P by Infineon Technologies AG

Overview of SPB18P06P by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Part Details for SPB18P06P

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SPB18P06P Part Data Attributes:

SPB18P06P Infineon Technologies AG
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SPB18P06P Infineon Technologies AG Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description PLASTIC, TO-263, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 151 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 18.7 A
Drain-source On Resistance-Max 0.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 220
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 80 W
Pulsed Drain Current-Max (IDM) 74.8 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for SPB18P06P

This table gives cross-reference parts and alternative options found for SPB18P06P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB18P06P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPB18P06P 18.7A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, PLASTIC, TO-263, 3 PIN Rochester Electronics LLC SPB18P06P vs SPB18P06P
Part Number Description Manufacturer Compare
STD10PF06T4 P-Channel 60V - 0.18 Ohm - 10A STripFET(TM) II POWER MOSFET STMicroelectronics SPB18P06P vs STD10PF06T4
SFW9Z34 Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Samsung Semiconductor SPB18P06P vs SFW9Z34
SFW9Z24 Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, DPAK-2 Fairchild Semiconductor Corporation SPB18P06P vs SFW9Z24
SFR9024TF Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation SPB18P06P vs SFR9024TF
SFW9Z24TM 9.7A, 60V, 0.28ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 Rochester Electronics LLC SPB18P06P vs SFW9Z24TM
SFR9014 Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation SPB18P06P vs SFR9014
RFD8P05SM Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor SPB18P06P vs RFD8P05SM
SPD08P06P Power Field-Effect Transistor, 8.83A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, TO-252, 3 PIN Infineon Technologies AG SPB18P06P vs SPD08P06P
RFD8P05SM 8A, 50V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation SPB18P06P vs RFD8P05SM
SUD08P06-155L-E3 Power Field-Effect Transistor, 8.4A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SPB18P06P vs SUD08P06-155L-E3

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