Part Details for SFW9Z34 by Samsung Semiconductor
Overview of SFW9Z34 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SFW9Z34
SFW9Z34 CAD Models
SFW9Z34 Part Data Attributes
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SFW9Z34
Samsung Semiconductor
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Datasheet
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SFW9Z34
Samsung Semiconductor
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 555 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 82 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for SFW9Z34
This table gives cross-reference parts and alternative options found for SFW9Z34. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SFW9Z34, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SUD08P06-155L-E3 | Power Field-Effect Transistor, 8.4A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SFW9Z34 vs SUD08P06-155L-E3 |
| SFR2955 | Power Field-Effect Transistor, 7.6A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Samsung Semiconductor | SFW9Z34 vs SFR2955 |
| SFW9Z24 | Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, DPAK-2 | Fairchild Semiconductor Corporation | SFW9Z34 vs SFW9Z24 |
| RFD8P06ESM9A | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN | Fairchild Semiconductor Corporation | SFW9Z34 vs RFD8P06ESM9A |
| SPB18P06P | 18.7A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, PLASTIC, TO-263, 3 PIN | Rochester Electronics LLC | SFW9Z34 vs SPB18P06P |
| SPB08P06P | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | SFW9Z34 vs SPB08P06P |
| RFD8P05SM9A | 8A, 50V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | SFW9Z34 vs RFD8P05SM9A |
| RFD8P06ESM9A | 8A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | SFW9Z34 vs RFD8P06ESM9A |
| SFR9014 | Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | SFW9Z34 vs SFR9014 |
| RFD8P05SM | 8A, 50V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | SFW9Z34 vs RFD8P05SM |