Datasheets
SFR9014 by:

Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

Part Details for SFR9014 by Fairchild Semiconductor Corporation

Overview of SFR9014 by Fairchild Semiconductor Corporation

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for SFR9014

Part # Distributor Description Stock Price Buy
Chip1Cloud Advanced Power MOSFET 1300
RFQ

Part Details for SFR9014

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SFR9014 Part Data Attributes

SFR9014 Fairchild Semiconductor Corporation
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SFR9014 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-252
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 120 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 5.3 A
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 24 W
Pulsed Drain Current-Max (IDM) 21 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SFR9014

This table gives cross-reference parts and alternative options found for SFR9014. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SFR9014, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQD7P06TM Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation SFR9014 vs FQD7P06TM
FQD7P06TM Power MOSFET, P-Channel, QFET®, -60 V, -5.4 A, 450 mΩ, DPAK, 2500-REEL onsemi SFR9014 vs FQD7P06TM
Part Number Description Manufacturer Compare
SUD08P06-155L-E3 Power Field-Effect Transistor, 8.4A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SFR9014 vs SUD08P06-155L-E3
SFR2955 Power Field-Effect Transistor, 7.6A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Samsung Semiconductor SFR9014 vs SFR2955
SFW9Z24 Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, DPAK-2 Fairchild Semiconductor Corporation SFR9014 vs SFW9Z24
RFD8P06ESM9A Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN Fairchild Semiconductor Corporation SFR9014 vs RFD8P06ESM9A
SPB18P06P 18.7A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, PLASTIC, TO-263, 3 PIN Rochester Electronics LLC SFR9014 vs SPB18P06P
SPB08P06P Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Infineon Technologies AG SFR9014 vs SPB08P06P
RFD8P05SM9A 8A, 50V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation SFR9014 vs RFD8P05SM9A
RFD8P06ESM9A 8A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation SFR9014 vs RFD8P06ESM9A
RFD8P05SM 8A, 50V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation SFR9014 vs RFD8P05SM
SFW2955 Power Field-Effect Transistor, 9.4A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Samsung Semiconductor SFR9014 vs SFW2955

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