Datasheets
SFW9Z24TM by:

9.7A, 60V, 0.28ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3

Part Details for SFW9Z24TM by Rochester Electronics LLC

Overview of SFW9Z24TM by Rochester Electronics LLC

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Part Details for SFW9Z24TM

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SFW9Z24TM Part Data Attributes

SFW9Z24TM Rochester Electronics LLC
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SFW9Z24TM Rochester Electronics LLC 9.7A, 60V, 0.28ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code D2PAK
Package Description D2PAK-3
Pin Count 3
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 161 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 9.7 A
Drain-source On Resistance-Max 0.28 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SFW9Z24TM

This table gives cross-reference parts and alternative options found for SFW9Z24TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SFW9Z24TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SUD08P06-155L-E3 Power Field-Effect Transistor, 8.4A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SFW9Z24TM vs SUD08P06-155L-E3
SFR2955 Power Field-Effect Transistor, 7.6A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Samsung Semiconductor SFW9Z24TM vs SFR2955
SFW9Z24 Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, DPAK-2 Fairchild Semiconductor Corporation SFW9Z24TM vs SFW9Z24
RFD8P06ESM9A Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN Fairchild Semiconductor Corporation SFW9Z24TM vs RFD8P06ESM9A
SPB18P06P 18.7A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, PLASTIC, TO-263, 3 PIN Rochester Electronics LLC SFW9Z24TM vs SPB18P06P
SPB08P06P Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Infineon Technologies AG SFW9Z24TM vs SPB08P06P
RFD8P05SM9A 8A, 50V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation SFW9Z24TM vs RFD8P05SM9A
RFD8P06ESM9A 8A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation SFW9Z24TM vs RFD8P06ESM9A
SFR9014 Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation SFW9Z24TM vs SFR9014
RFD8P05SM 8A, 50V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation SFW9Z24TM vs RFD8P05SM

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