Part Details for SPB18P06P by Rochester Electronics LLC
Overview of SPB18P06P by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SPB18P06P
SPB18P06P CAD Models
SPB18P06P Part Data Attributes
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SPB18P06P
Rochester Electronics LLC
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Datasheet
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SPB18P06P
Rochester Electronics LLC
18.7A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | D2PAK | |
| Package Description | PLASTIC, TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 151 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 18.7 A | |
| Drain-source On Resistance-Max | 0.13 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 220 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 74.8 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | NOT SPECIFIED | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SPB18P06P
This table gives cross-reference parts and alternative options found for SPB18P06P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB18P06P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SUD08P06-155L-E3 | Power Field-Effect Transistor, 8.4A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SPB18P06P vs SUD08P06-155L-E3 |
| SFR2955 | Power Field-Effect Transistor, 7.6A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Samsung Semiconductor | SPB18P06P vs SFR2955 |
| SFW9Z24 | Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, DPAK-2 | Fairchild Semiconductor Corporation | SPB18P06P vs SFW9Z24 |
| RFD8P06ESM9A | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN | Fairchild Semiconductor Corporation | SPB18P06P vs RFD8P06ESM9A |
| SPB08P06P | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | SPB18P06P vs SPB08P06P |
| RFD8P05SM9A | 8A, 50V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | SPB18P06P vs RFD8P05SM9A |
| RFD8P06ESM9A | 8A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | SPB18P06P vs RFD8P06ESM9A |
| SFR9014 | Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | SPB18P06P vs SFR9014 |
| RFD8P05SM | 8A, 50V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | SPB18P06P vs RFD8P05SM |
| SFW2955 | Power Field-Effect Transistor, 9.4A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Samsung Semiconductor | SPB18P06P vs SFW2955 |