Part Details for PSMN070-200B,118 by NXP Semiconductors
Overview of PSMN070-200B,118 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for PSMN070-200B,118
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | PSMN070 - 35A, 200V, 0.07ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 200 |
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$1.0200 / $1.1900 | Buy Now |
Part Details for PSMN070-200B,118
PSMN070-200B,118 CAD Models
PSMN070-200B,118 Part Data Attributes:
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PSMN070-200B,118
NXP Semiconductors
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Datasheet
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Compare Parts:
PSMN070-200B,118
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | D2PAK | |
| Package Description | PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT404 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Factory Lead Time | 4 Weeks | |
| Avalanche Energy Rating (Eas) | 462 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PSMN070-200B,118
This table gives cross-reference parts and alternative options found for PSMN070-200B,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN070-200B,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PSMN070-200B | TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | NXP Semiconductors | PSMN070-200B,118 vs PSMN070-200B |
| PSMN070-200B/T3 | Power Field-Effect Transistor | Nexperia | PSMN070-200B,118 vs PSMN070-200B/T3 |
| PSMN070-200B/T3 | TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | NXP Semiconductors | PSMN070-200B,118 vs PSMN070-200B/T3 |