Part Details for IRFS31N20DPBF by International Rectifier
Overview of IRFS31N20DPBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFS31N20DPBF
IRFS31N20DPBF CAD Models
IRFS31N20DPBF Part Data Attributes
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IRFS31N20DPBF
International Rectifier
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Datasheet
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IRFS31N20DPBF
International Rectifier
Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | LEAD FREE, PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 420 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 31 A | |
| Drain-source On Resistance-Max | 0.082 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Pulsed Drain Current-Max (IDM) | 124 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFS31N20DPBF
This table gives cross-reference parts and alternative options found for IRFS31N20DPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS31N20DPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PSMN070-200B,118 | Nexperia | Check for Price | N-channel TrenchMOS SiliconMAX standard level FET@en-us D2PAK 3-Pin | IRFS31N20DPBF vs PSMN070-200B,118 |
| PSMN070-200B,118 | NXP Semiconductors | Check for Price | N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin | IRFS31N20DPBF vs PSMN070-200B,118 |
| IRFS31N20DTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | IRFS31N20DPBF vs IRFS31N20DTRR |
| FQB34N20LTM | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3 | IRFS31N20DPBF vs FQB34N20LTM |
| PSMN070-200B/T3 | NXP Semiconductors | Check for Price | TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | IRFS31N20DPBF vs PSMN070-200B/T3 |
| FQB34N20TM | Rochester Electronics LLC | Check for Price | 31A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3 | IRFS31N20DPBF vs FQB34N20TM |
| IRFS23N20DTRLP | International Rectifier | Check for Price | Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRFS31N20DPBF vs IRFS23N20DTRLP |
| PSMN070-200B | NXP Semiconductors | Check for Price | TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | IRFS31N20DPBF vs PSMN070-200B |
| IRFS23N20DTRRP | International Rectifier | Check for Price | Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRFS31N20DPBF vs IRFS23N20DTRRP |