Datasheets
FQB34N20TM by:

31A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3

Part Details for FQB34N20TM by Rochester Electronics LLC

Overview of FQB34N20TM by Rochester Electronics LLC

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Part Details for FQB34N20TM

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FQB34N20TM Part Data Attributes

FQB34N20TM Rochester Electronics LLC
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FQB34N20TM Rochester Electronics LLC 31A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-263
Package Description D2PAK-3
Pin Count 3
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 640 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 124 A
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQB34N20TM

This table gives cross-reference parts and alternative options found for FQB34N20TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB34N20TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQB34N20TM_AM002 N-Channel QFET® MOSFET 200V, 31A, 75mΩ, TO-263 2L (D2PAK), 6400-TAPE REEL onsemi FQB34N20TM vs FQB34N20TM_AM002
FQB34N20TM Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQB34N20TM vs FQB34N20TM
FQB34N20TM-AM002 Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, D2PAK, TO-263 2L (D2PAK), 800-REEL onsemi FQB34N20TM vs FQB34N20TM-AM002
Part Number Description Manufacturer Compare
PSMN070-200B/T3 TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors FQB34N20TM vs PSMN070-200B/T3
IRFS23N20DTRR Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier FQB34N20TM vs IRFS23N20DTRR
PSMN070-200B,118 N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin NXP Semiconductors FQB34N20TM vs PSMN070-200B,118
IRFS23N20DPBF Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier FQB34N20TM vs IRFS23N20DPBF
FQB34N20L Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQB34N20TM vs FQB34N20L
IRFS31N20DTRR Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier FQB34N20TM vs IRFS31N20DTRR
IRFS31N20DPBF Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier FQB34N20TM vs IRFS31N20DPBF
IRFS23N20DTRLP Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier FQB34N20TM vs IRFS23N20DTRLP
934055719118 TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors FQB34N20TM vs 934055719118
IRFS23N20D Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier FQB34N20TM vs IRFS23N20D

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