Part Details for IRFS31N20D by International Rectifier
Overview of IRFS31N20D by International Rectifier
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFS31N20D
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2285 |
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RFQ | ||
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Bristol Electronics | 955 |
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RFQ | ||
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Quest Components | 31 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET | 4 |
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$1.2000 / $1.4400 | Buy Now |
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Quest Components | 31 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET | 11 |
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$1.8750 / $3.0000 | Buy Now |
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Quest Components | 31 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET | 2 |
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$2.4948 / $3.3264 | Buy Now |
DISTI #
SMC-IRFS31N20D
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Sensible Micro Corporation | 31 A, 200 V, 0.082 Ohm, N-Channel, Si, Power, Mosfet RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 07+ Container: Tubes | 53 |
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$0.8720 | RFQ |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 49 |
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$1.0000 / $1.5400 | Buy Now |
Part Details for IRFS31N20D
IRFS31N20D CAD Models
IRFS31N20D Part Data Attributes
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IRFS31N20D
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFS31N20D
International Rectifier
Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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Pbfree Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 420 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 31 A | |
Drain-source On Resistance-Max | 0.082 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 124 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFS31N20D
This table gives cross-reference parts and alternative options found for IRFS31N20D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS31N20D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFS31N20DTRR | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IRFS31N20D vs IRFS31N20DTRR |
IRFS31N20DTRL | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IRFS31N20D vs IRFS31N20DTRL |
IRFS31N20DPBF | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFS31N20D vs IRFS31N20DPBF |