Datasheets
MMBT5401 by:

Transistor,

Part Details for MMBT5401 by Galaxy Semi-Conductor Co Ltd

Overview of MMBT5401 by Galaxy Semi-Conductor Co Ltd

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Applications Consumer Electronics Audio and Video Systems

Part Details for MMBT5401

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MMBT5401 Part Data Attributes:

MMBT5401 Galaxy Semi-Conductor Co Ltd
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MMBT5401 Galaxy Semi-Conductor Co Ltd Transistor,
Part Life Cycle Code Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 0.6 A
Collector-Emitter Voltage-Max 160 V
Configuration SINGLE
DC Current Gain-Min (hFE) 50
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz

Alternate Parts for MMBT5401

This table gives cross-reference parts and alternative options found for MMBT5401. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBT5401, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMBT5401 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Yangzhou Yangjie Electronics Co Ltd MMBT5401 vs MMBT5401
MMBT5401 Small Signal Bipolar Transistor, Taitron Components Inc MMBT5401 vs MMBT5401
Part Number Description Manufacturer Compare
MMBT5401Q-7-F Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Diodes Incorporated MMBT5401 vs MMBT5401Q-7-F
MMST5401-13-F Small Signal Bipolar Transistor, Diodes Incorporated MMBT5401 vs MMST5401-13-F
MMBTA92 Small Signal Bipolar Transistor, 0.3A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Yangzhou Yangjie Electronics Co Ltd MMBT5401 vs MMBTA92
MMBTA92F2 Small Signal Bipolar Transistor, 0.3A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Yangzhou Yangjie Electronics Co Ltd MMBT5401 vs MMBTA92F2
MMBT5401-13-F Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Diodes Incorporated MMBT5401 vs MMBT5401-13-F
MMST5401 General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 150V; IC (A): 0.5A; HFE Min: 60; HFE Max: 240; VCE (V): 5V; IC (mA): 10mA; VCE(SAT) (V): 0.5V; IC (mA)1: 50mA; IB (mA): 5mA; FT Min (MHz): 100 MHz; PTM Max (W): 0.2W; Package: SOT-323; package_code: SOT-323; mfr_package_code: SOT-323 Galaxy Microelectronics MMBT5401 vs MMST5401
MMBTA92 General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 300V; IC (A): 0.1A; HFE Min: 40; VCE (V): 10V; IC (mA): 10mA; VCE(SAT) (V): 0.5V; IC (mA)1: 20mA; IB (mA): 2mA; FT Min (MHz): 50 MHz; PTM Max (W): 0.35W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23 Galaxy Microelectronics MMBT5401 vs MMBTA92
2N5401 Small Signal Bipolar Transistor, NTE Electronics Inc MMBT5401 vs 2N5401
MMBT5401 General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 150V; IC (A): 0.5A; HFE Min: 60; HFE Max: 240; VCE (V): 5V; IC (mA): 10mA; VCE(SAT) (V): 0.5V; IC (mA)1: 50mA; IB (mA): 5mA; FT Min (MHz): 100 MHz; PTM Max (W): 0.3W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23 Galaxy Microelectronics MMBT5401 vs MMBT5401
MMBT5401 Small Signal Bipolar Transistor, Taitron Components Inc MMBT5401 vs MMBT5401

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