Datasheets
MMST5401-13-F by: Diodes Incorporated

Small Signal Bipolar Transistor,

Part Details for MMST5401-13-F by Diodes Incorporated

Overview of MMST5401-13-F by Diodes Incorporated

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Part Details for MMST5401-13-F

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MMST5401-13-F Part Data Attributes

MMST5401-13-F Diodes Incorporated
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MMST5401-13-F Diodes Incorporated Small Signal Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Collector Current-Max (IC) 0.2 A
Collector-Emitter Voltage-Max 150 V
Configuration SINGLE
DC Current Gain-Min (hFE) 50
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz

Alternate Parts for MMST5401-13-F

This table gives cross-reference parts and alternative options found for MMST5401-13-F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMST5401-13-F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FMBS5401 Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, PNP, Silicon, SUPERSOT-6, 6 PIN Fairchild Semiconductor Corporation MMST5401-13-F vs FMBS5401
MMBTA92 Small Signal Bipolar Transistor, 0.3A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Yangzhou Yangjie Electronics Co Ltd MMST5401-13-F vs MMBTA92
NSVMMBT5401WT1G High Voltage PNP Bipolar Transistor PNP High Voltage Transistor, 3000-REEL, Automotive Qualified onsemi MMST5401-13-F vs NSVMMBT5401WT1G
MMST5401 General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 150V; IC (A): 0.5A; HFE Min: 60; HFE Max: 240; VCE (V): 5V; IC (mA): 10mA; VCE(SAT) (V): 0.5V; IC (mA)1: 50mA; IB (mA): 5mA; FT Min (MHz): 100 MHz; PTM Max (W): 0.2W; Package: SOT-323; package_code: SOT-323; mfr_package_code: SOT-323 Galaxy Microelectronics MMST5401-13-F vs MMST5401
MMBTA92-TP-HF Small Signal Bipolar Transistor, 0.3A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 Micro Commercial Components MMST5401-13-F vs MMBTA92-TP-HF
MMBT5401 General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 150V; IC (A): 0.5A; HFE Min: 60; HFE Max: 240; VCE (V): 5V; IC (mA): 10mA; VCE(SAT) (V): 0.5V; IC (mA)1: 50mA; IB (mA): 5mA; FT Min (MHz): 100 MHz; PTM Max (W): 0.3W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23 Galaxy Microelectronics MMST5401-13-F vs MMBT5401
MMBTA92F2 Small Signal Bipolar Transistor, 0.3A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Yangzhou Yangjie Electronics Co Ltd MMST5401-13-F vs MMBTA92F2
MMBT5401-13-F Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Diodes Incorporated MMST5401-13-F vs MMBT5401-13-F
MMBT5401F2 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Yangzhou Yangjie Electronics Co Ltd MMST5401-13-F vs MMBT5401F2
MMBT5401Q-7-F Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Diodes Incorporated MMST5401-13-F vs MMBT5401Q-7-F

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