MMBT5401
vs
2N5401
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
NTE ELECTRONICS INC
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.6 A
|
0.6 A
|
| Collector-Emitter Voltage-Max |
160 V
|
150 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
50
|
50
|
| JESD-30 Code |
R-PDSO-G3
|
O-PBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
WIRE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| Base Number Matches |
1
|
1
|
| JEDEC-95 Code |
|
TO-92
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
|
|
|
Compare MMBT5401 with alternatives
Compare 2N5401 with alternatives