Datasheets
IRF840LC by:

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for IRF840LC by International Rectifier

Overview of IRF840LC by International Rectifier

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Price & Stock for IRF840LC

Part # Distributor Description Stock Price Buy
Bristol Electronics   394
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-220AB 36
  • 1 $2.4250
  • 3 $2.2310
  • 12 $1.9400
$1.9400 / $2.4250 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 141
  • 1 $6.2427
  • 17 $4.1618
  • 61 $3.8497
$3.8497 / $6.2427 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 11
  • 1 $2.3100
  • 100 $1.7300
  • 1,000 $1.5000
$1.5000 / $2.3100 Buy Now

Part Details for IRF840LC

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IRF840LC Part Data Attributes

IRF840LC International Rectifier
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IRF840LC International Rectifier Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF840LC

This table gives cross-reference parts and alternative options found for IRF840LC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840LC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2SK1865 TRANSISTOR 12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FL, TO-220FL, 3 PIN, FET General Purpose Power Toshiba America Electronic Components IRF840LC vs 2SK1865
IRF840 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix IRF840LC vs IRF840
IRF840-009 Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF840LC vs IRF840-009
IRF841 Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRF840LC vs IRF841
IRF842 Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF840LC vs IRF842
IRF744 Power Field-Effect Transistor, 8.8A I(D), 450V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF840LC vs IRF744
IRF841 Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF840LC vs IRF841
IRF843 7A, 450V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF840LC vs IRF843
IRF840 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF840LC vs IRF840
IRF842 7A, 500V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF840LC vs IRF842
Part Number Description Manufacturer Compare
IRF841 Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF840LC vs IRF841
IRF843-009 Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF840LC vs IRF843-009
IRF842 Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF840LC vs IRF842
IRF843 7A, 450V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF840LC vs IRF843
IRF842 7A, 500V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF840LC vs IRF842
BUK657-500B TRANSISTOR 9 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO220AB, TO-220AB, 3 PIN, FET General Purpose Power NXP Semiconductors IRF840LC vs BUK657-500B
MTP8N50 Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF840LC vs MTP8N50
IRF840APBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRF840LC vs IRF840APBF
IRF842-001 Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF840LC vs IRF842-001
YTA840 TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power Toshiba America Electronic Components IRF840LC vs YTA840

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