Datasheets
IRF840-009 by: International Rectifier

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for IRF840-009 by International Rectifier

Overview of IRF840-009 by International Rectifier

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Part Details for IRF840-009

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IRF840-009 Part Data Attributes:

IRF840-009 International Rectifier
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IRF840-009 International Rectifier Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 510 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 125 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF840-009

This table gives cross-reference parts and alternative options found for IRF840-009. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840-009, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF841 Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF840-009 vs IRF841
IRF841 Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF840-009 vs IRF841
IRF843 7A, 450V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF840-009 vs IRF843
IRF843 Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF840-009 vs IRF843
IRF840 Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF840-009 vs IRF840
IRF842 7A, 500V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF840-009 vs IRF842
IRF840LCPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF840-009 vs IRF840LCPBF
BUZ40B Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens IRF840-009 vs BUZ40B
IRF840 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF840-009 vs IRF840
IRF840PBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRF840-009 vs IRF840PBF
Part Number Description Manufacturer Compare
IRF840PBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRF840-009 vs IRF840PBF
MTP8N50E 8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi IRF840-009 vs MTP8N50E
MTP8N50E 8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF840-009 vs MTP8N50E
IRF840 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF840-009 vs IRF840
MTP8N50 Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF840-009 vs MTP8N50
BUK457-500B TRANSISTOR 9 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3, FET General Purpose Power NXP Semiconductors IRF840-009 vs BUK457-500B
IRF841 Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF840-009 vs IRF841
IRF841 Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF840-009 vs IRF841
IRF843 Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF840-009 vs IRF843
IRF840A Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF840-009 vs IRF840A

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