Datasheets
IRF841 by:

Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for IRF841 by TT Electronics Resistors

Overview of IRF841 by TT Electronics Resistors

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Part Details for IRF841

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IRF841 Part Data Attributes:

IRF841 TT Electronics Resistors
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IRF841 TT Electronics Resistors Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer TT ELECTRONICS PLC
Package Description TO-220, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 450 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IRF841

This table gives cross-reference parts and alternative options found for IRF841. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF841, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2SK1503-01 Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fuji Electric Co Ltd IRF841 vs 2SK1503-01
IRF842-001 Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF841 vs IRF842-001
IRF843 Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF841 vs IRF843
IRF842 Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF841 vs IRF842
IRF841-006 Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF841 vs IRF841-006
YTA840 TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power Toshiba America Electronic Components IRF841 vs YTA840
BUZ40B Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG IRF841 vs BUZ40B
IRF843 TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,7A I(D),TO-220AB Intersil Corporation IRF841 vs IRF843
IRF843-006 Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF841 vs IRF843-006
IRF843-010 Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF841 vs IRF843-010
Part Number Description Manufacturer Compare
IRF840PBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRF841 vs IRF840PBF
MTP8N50E 8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi IRF841 vs MTP8N50E
MTP8N50E 8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF841 vs MTP8N50E
IRF840 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF841 vs IRF840
MTP8N50 Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF841 vs MTP8N50
BUK457-500B TRANSISTOR 9 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3, FET General Purpose Power NXP Semiconductors IRF841 vs BUK457-500B
IRF841 Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF841 vs IRF841
IRF841 Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF841 vs IRF841
IRF843 Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF841 vs IRF843
IRF840A Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF841 vs IRF840A

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