Vishay Intertechnologies |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN |
$2.2338 / $5.5593
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International Rectifier |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$0.7500 / $9.6000
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New Jersey Semiconductor Products, Inc. |
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$0.8820 / $2.5200
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New Jersey Semiconductor Products Inc |
MOSFET Transistor, P-Channel, TO-220AB |
$1.0920 / $3.3600
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Harris Semiconductor |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$1.2200 / $8.4000
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Thomson Consumer Electronics |
Transistor |
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Rochester Electronics LLC |
6.5A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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Freescale Semiconductor |
TRANSISTOR,MOSFET,P-CHANNEL,200V V(BR)DSS,6.5A I(D),TO-220AB |
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Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Intersil Corporation |
6.5A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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Motorola Mobility LLC |
6.5A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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Motorola Semiconductor Products |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Samsung Semiconductor |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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Vishay Siliconix |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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