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Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
01AC4890
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Newark | Mosfet, N-Ch, 500V, 8.7A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:8.7A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Vishay IRF840BPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 6701 |
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$0.4160 | Buy Now |
DISTI #
IRF840BPBF
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Avnet Americas | Trans MOSFET N-CH 500V 8.7A 3-Pin TO-220AB - Rail/Tube (Alt: IRF840BPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
|
$0.6026 / $0.7656 | Buy Now |
DISTI #
01AC4890
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Avnet Americas | Trans MOSFET N-CH 500V 8.7A 3-Pin TO-220AB - Bulk (Alt: 01AC4890) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Bulk | 49 Partner Stock |
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$0.9720 / $1.5500 | Buy Now |
DISTI #
78-IRF840BPBF
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Mouser Electronics | MOSFET 500V 850mOhm@10V 8.7A N-Ch D-SRS RoHS: Compliant | 1918 |
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$0.5590 / $1.4100 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 | 0 |
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$0.5960 | Buy Now |
DISTI #
IRF840BPBF
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TTI | MOSFET 500V 850mOhm@10V 8.7A N-Ch D-SRS RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 500 In Stock |
|
$0.5600 / $0.8300 | Buy Now |
DISTI #
IRF840BPBF
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Avnet Americas | Trans MOSFET N-CH 500V 8.7A 3-Pin TO-220AB - Rail/Tube (Alt: IRF840BPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
|
$0.6026 / $0.7656 | Buy Now |
DISTI #
01AC4890
|
Avnet Americas | Trans MOSFET N-CH 500V 8.7A 3-Pin TO-220AB - Bulk (Alt: 01AC4890) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Bulk | 49 Partner Stock |
|
$0.9720 / $1.5500 | Buy Now |
DISTI #
IRF840BPBF
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TME | Transistor: N-MOSFET, unipolar, 500V, 8.7A, Idm: 18A, 156W, TO220AB Min Qty: 1 | 0 |
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$0.7000 / $1.0500 | RFQ |
DISTI #
IRF840BPBF
|
Avnet Americas | Trans MOSFET N-CH 500V 8.7A 3-Pin TO-220AB - Rail/Tube (Alt: IRF840BPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
|
$0.6026 / $0.7656 | Buy Now |
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IRF840BPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF840BPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
Factory Lead Time | 16 Weeks, 4 Days | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 56 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 8.7 A | |
Drain-source On Resistance-Max | 0.85 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 8 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 156 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 56 ns | |
Turn-on Time-Max (ton) | 58 ns |
This table gives cross-reference parts and alternative options found for IRF840BPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840BPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF840AJ69Z | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IRF840BPBF vs IRF840AJ69Z |
SIHB8N50D-GE3 | Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2 | Vishay Intertechnologies | IRF840BPBF vs SIHB8N50D-GE3 |
SFF440C | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254C, 3 PIN | Solid State Devices Inc (SSDI) | IRF840BPBF vs SFF440C |
SFF440Z | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solid State Devices Inc (SSDI) | IRF840BPBF vs SFF440Z |
SFF440-28 | Power Field-Effect Transistor, 8A I(D), 500V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28 | Solid State Devices Inc (SSDI) | IRF840BPBF vs SFF440-28 |
UF840-TA3-T | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Unisonic Technologies Co Ltd | IRF840BPBF vs UF840-TA3-T |
IRF840B_NL | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IRF840BPBF vs IRF840B_NL |
IRF840BPBF | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | IRF840BPBF vs IRF840BPBF |
FMP08N50E | Power Field-Effect Transistor, 7.5A I(D), 500V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Fuji Electric Co Ltd | IRF840BPBF vs FMP08N50E |
STB9NK50ZT4 | N-channel 500 V, 0.72 Ohm typ., 7.2 A SuperMESH Power MOSFET in a D2PAK package | STMicroelectronics | IRF840BPBF vs STB9NK50ZT4 |