Part Details for SIHB8N50D-GE3 by Vishay Intertechnologies
Overview of SIHB8N50D-GE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHB8N50D-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHB8N50D-GE3
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Avnet Americas | Trans MOSFET N-CH 500V 8.7A 3-Pin D2PAK - Tape and Reel (Alt: SIHB8N50D-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.6885 / $0.8747 | Buy Now |
DISTI #
SIHB8N50D-GE3
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Avnet Americas | Trans MOSFET N-CH 500V 8.7A 3-Pin D2PAK - Tape and Reel (Alt: SIHB8N50D-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.6885 / $0.8747 | Buy Now |
DISTI #
78-SIHB8N50D-GE3
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Mouser Electronics | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | 0 |
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$0.6850 / $0.7210 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 | 0 |
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$0.6800 | Buy Now |
DISTI #
SIHB8N50D-GE3
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TTI | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube | Americas - 0 |
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$0.7000 / $0.7100 | Buy Now |
DISTI #
SIHB8N50D-GE3
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Avnet Americas | Trans MOSFET N-CH 500V 8.7A 3-Pin D2PAK - Tape and Reel (Alt: SIHB8N50D-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.6885 / $0.8747 | Buy Now |
DISTI #
SIHB8N50D-GE3
|
Avnet Americas | Trans MOSFET N-CH 500V 8.7A 3-Pin D2PAK - Tape and Reel (Alt: SIHB8N50D-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.6885 / $0.8747 | Buy Now |
DISTI #
SIHB8N50D-GE3
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TME | Transistor: N-MOSFET, unipolar, 500V, 5.5A, Idm: 18A, 156W Min Qty: 1 | 0 |
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$0.8800 / $1.3200 | RFQ |
Part Details for SIHB8N50D-GE3
SIHB8N50D-GE3 CAD Models
SIHB8N50D-GE3 Part Data Attributes:
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SIHB8N50D-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHB8N50D-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 29 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 8.7 A | |
Drain-source On Resistance-Max | 0.85 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 156 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SIHB8N50D-GE3
This table gives cross-reference parts and alternative options found for SIHB8N50D-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHB8N50D-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
UF840G-TA3-T | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | SIHB8N50D-GE3 vs UF840G-TA3-T |
SFF440M | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solid State Devices Inc (SSDI) | SIHB8N50D-GE3 vs SFF440M |
SIHP8N50D-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHB8N50D-GE3 vs SIHP8N50D-GE3 |
SFF440Z | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solid State Devices Inc (SSDI) | SIHB8N50D-GE3 vs SFF440Z |
IRF840BPBF | Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Vishay Intertechnologies | SIHB8N50D-GE3 vs IRF840BPBF |
SIHP8N50D-GE3 | Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHB8N50D-GE3 vs SIHP8N50D-GE3 |
SFF440-28 | Power Field-Effect Transistor, 8A I(D), 500V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28 | Solid State Devices Inc (SSDI) | SIHB8N50D-GE3 vs SFF440-28 |
UF840G-TQ2-T | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | SIHB8N50D-GE3 vs UF840G-TQ2-T |
UF840G-TQ2-R | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | SIHB8N50D-GE3 vs UF840G-TQ2-R |
UF840-TQ2-R | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Unisonic Technologies Co Ltd | SIHB8N50D-GE3 vs UF840-TQ2-R |