Datasheets
UF840-TA3-T by: Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for UF840-TA3-T by Unisonic Technologies Co Ltd

Overview of UF840-TA3-T by Unisonic Technologies Co Ltd

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Applications Energy and Power Systems Renewable Energy

Part Details for UF840-TA3-T

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UF840-TA3-T Part Data Attributes:

UF840-TA3-T Unisonic Technologies Co Ltd
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UF840-TA3-T Unisonic Technologies Co Ltd Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Part Life Cycle Code Active
Ihs Manufacturer UNISONIC TECHNOLOGIES CO LTD
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 510 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 32 A
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for UF840-TA3-T

This table gives cross-reference parts and alternative options found for UF840-TA3-T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UF840-TA3-T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
UF840G-TA3-T Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN Unisonic Technologies Co Ltd UF840-TA3-T vs UF840G-TA3-T
Part Number Description Manufacturer Compare
UF840G-TA3-T Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN Unisonic Technologies Co Ltd UF840-TA3-T vs UF840G-TA3-T
SFF440M Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Solid State Devices Inc (SSDI) UF840-TA3-T vs SFF440M
SIHP8N50D-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix UF840-TA3-T vs SIHP8N50D-GE3
SFF440Z Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN Solid State Devices Inc (SSDI) UF840-TA3-T vs SFF440Z
IRF840BPBF Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Vishay Intertechnologies UF840-TA3-T vs IRF840BPBF
SIHP8N50D-GE3 Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies UF840-TA3-T vs SIHP8N50D-GE3
SFF440-28 Power Field-Effect Transistor, 8A I(D), 500V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28 Solid State Devices Inc (SSDI) UF840-TA3-T vs SFF440-28
UF840G-TQ2-T Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN Unisonic Technologies Co Ltd UF840-TA3-T vs UF840G-TQ2-T
UF840G-TQ2-R Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN Unisonic Technologies Co Ltd UF840-TA3-T vs UF840G-TQ2-R
UF840-TQ2-R Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Unisonic Technologies Co Ltd UF840-TA3-T vs UF840-TQ2-R

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