IRF840BPBF vs STB9NK50ZT4 feature comparison

IRF840BPBF Vishay Intertechnologies

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STB9NK50ZT4 STMicroelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC STMICROELECTRONICS
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 16 Weeks, 4 Days 14 Weeks
Samacsys Manufacturer Vishay STMicroelectronics
Avalanche Energy Rating (Eas) 56 mJ 190 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 8.7 A 7.2 A
Drain-source On Resistance-Max 0.85 Ω 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 8 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 156 W 110 W
Pulsed Drain Current-Max (IDM) 18 A 28.8 A
Surface Mount NO YES
Terminal Finish MATTE TIN OVER NICKEL Matte Tin (Sn)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 56 ns
Turn-on Time-Max (ton) 58 ns
Base Number Matches 2 1
Package Description D2PAK-3
Pin Count 3
Date Of Intro 1980-01-04
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 245
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30

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