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Part Details for STB9NK50ZT4 by STMicroelectronics
Overview of STB9NK50ZT4 by STMicroelectronics
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for STB9NK50ZT4
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
94T3323
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Newark | Mosfet Transistor, N Channel, 7.2 A, 500 V, 0.72 Ohm, 10 V, 3.75 V Rohs Compliant: Yes |Stmicroelectronics STB9NK50ZT4 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 552 |
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$1.0400 / $1.7700 | Buy Now |
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DISTI #
57P0654
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Newark | Mosfet, N Ch, 500V, 7.2A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:7.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.75V Rohs Compliant: Yes |Stmicroelectronics STB9NK50ZT4 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.8530 | Buy Now |
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DISTI #
497-12543-1-ND
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DigiKey | MOSFET N-CH 500V 7.2A D2PAK Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1065 In Stock |
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$0.6384 / $1.5200 | Buy Now |
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DISTI #
STB9NK50ZT4
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Avnet Americas | Trans MOSFET N-CH 500V 7.2A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB9NK50ZT4) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$0.6665 / $0.7584 | Buy Now |
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DISTI #
511-STB9NK50Z
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Mouser Electronics | MOSFET N-Ch 500 Volt 7.2 A Zener SuperMESH RoHS: Compliant | 0 |
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$0.6380 / $1.5200 | Order Now |
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STMicroelectronics | N-channel 500 V, 0.72 Ohm typ., 7.2 A SuperMESH Power MOSFET in a D2PAK package RoHS: Compliant Min Qty: 1 | 0 |
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$0.8300 / $1.4900 | Buy Now |
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Future Electronics | STB9NK50 Series 500 V 7.2 A 0.85 Ohm Surface Mount N-Ch MOSFET - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 1000 Container: Reel | 0Reel |
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$0.6500 / $0.7000 | Buy Now |
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Future Electronics | STB9NK50 Series 500 V 7.2 A 0.85 Ohm Surface Mount N-Ch MOSFET - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 1000 Container: Reel | 0Reel |
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$0.6500 / $0.7000 | Buy Now |
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Bristol Electronics | 974 |
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RFQ | ||
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Quest Components | 779 |
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$0.8427 / $2.0428 | Buy Now |
Part Details for STB9NK50ZT4
STB9NK50ZT4 CAD Models
STB9NK50ZT4 Part Data Attributes:
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STB9NK50ZT4
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB9NK50ZT4
STMicroelectronics
N-channel 500 V, 0.72 Ohm typ., 7.2 A SuperMESH Power MOSFET in a D2PAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Date Of Intro | 1980-01-04 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 190 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 7.2 A | |
| Drain-source On Resistance-Max | 0.85 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 28.8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STB9NK50ZT4
This table gives cross-reference parts and alternative options found for STB9NK50ZT4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB9NK50ZT4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| UF840G-TA3-T | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | STB9NK50ZT4 vs UF840G-TA3-T |
| SFF440M | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solid State Devices Inc (SSDI) | STB9NK50ZT4 vs SFF440M |
| SIHP8N50D-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | STB9NK50ZT4 vs SIHP8N50D-GE3 |
| SFF440Z | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solid State Devices Inc (SSDI) | STB9NK50ZT4 vs SFF440Z |
| IRF840BPBF | Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Vishay Intertechnologies | STB9NK50ZT4 vs IRF840BPBF |
| SIHP8N50D-GE3 | Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | STB9NK50ZT4 vs SIHP8N50D-GE3 |
| SFF440-28 | Power Field-Effect Transistor, 8A I(D), 500V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28 | Solid State Devices Inc (SSDI) | STB9NK50ZT4 vs SFF440-28 |
| UF840G-TQ2-T | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | STB9NK50ZT4 vs UF840G-TQ2-T |
| UF840G-TQ2-R | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | STB9NK50ZT4 vs UF840G-TQ2-R |
| UF840-TQ2-R | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Unisonic Technologies Co Ltd | STB9NK50ZT4 vs UF840-TQ2-R |