Datasheets
FQU17P06 by:

Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

Part Details for FQU17P06 by Fairchild Semiconductor Corporation

Overview of FQU17P06 by Fairchild Semiconductor Corporation

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Applications Automotive

Part Details for FQU17P06

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FQU17P06 Part Data Attributes

FQU17P06 Fairchild Semiconductor Corporation
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FQU17P06 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-251
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature FAST SWITCHING
Avalanche Energy Rating (Eas) 300 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.135 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 44 W
Pulsed Drain Current-Max (IDM) 48 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQU17P06

This table gives cross-reference parts and alternative options found for FQU17P06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU17P06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQU17P06TU P-Channel QFET® MOSFET -60V, -12A, 135mΩ, TO251 (IPAK) MOLDED,3 LEAD, 5040/RAIL Fairchild Semiconductor Corporation FQU17P06 vs FQU17P06TU
FQU17P06TU 12A, 60V, 0.135ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 Rochester Electronics LLC FQU17P06 vs FQU17P06TU
FQU17P06TU Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, IPAK, 5040-TUBE onsemi FQU17P06 vs FQU17P06TU
Part Number Description Manufacturer Compare
SFU9024 Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation FQU17P06 vs SFU9024
FQU11P06TU 9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 Rochester Electronics LLC FQU17P06 vs FQU11P06TU
FQU11P06TU Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, IPAK, 5040-TUBE onsemi FQU17P06 vs FQU11P06TU
FQU17P06TU P-Channel QFET® MOSFET -60V, -12A, 135mΩ, TO251 (IPAK) MOLDED,3 LEAD, 5040/RAIL Fairchild Semiconductor Corporation FQU17P06 vs FQU17P06TU
SFU2955 Power Field-Effect Transistor, 7.6A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Samsung Semiconductor FQU17P06 vs SFU2955
FQU11P06 Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation FQU17P06 vs FQU11P06
SFU9034 Power Field-Effect Transistor, 14A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Samsung Semiconductor FQU17P06 vs SFU9034
FQU17P06TU Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, IPAK, 5040-TUBE onsemi FQU17P06 vs FQU17P06TU
FQU17P06TU 12A, 60V, 0.135ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 Rochester Electronics LLC FQU17P06 vs FQU17P06TU

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