Datasheets
FQU11P06TU by:

Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, IPAK, 5040-TUBE

Part Details for FQU11P06TU by onsemi

Overview of FQU11P06TU by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Medical Imaging Automotive Robotics and Drones

Price & Stock for FQU11P06TU

Part # Distributor Description Stock Price Buy
DISTI # 17M6300
Newark P Channel Mosfet, -60V, 9.4A, Ipak, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:9.4A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Onsemi FQU11P06TU Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 7
  • 1 $0.4600
  • 10 $0.4600
  • 100 $0.4220
  • 500 $0.3900
  • 1,000 $0.3900
  • 2,500 $0.3380
  • 10,000 $0.3380
$0.3380 / $0.4600 Buy Now
DISTI # 82C4386
Newark P Channel Mosfet, -60V, 9.4A, Ipak, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:9.4A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Onsemi FQU11P06TU Min Qty: 5040 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
Ameya Holding Limited   Min Qty: 70 60
  • 70 $0.8971
  • 350 $0.8075
$0.8075 / $0.8971 Buy Now

Part Details for FQU11P06TU

FQU11P06TU CAD Models

FQU11P06TU Part Data Attributes:

FQU11P06TU onsemi
Buy Now Datasheet
Compare Parts:
FQU11P06TU onsemi Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, IPAK, 5040-TUBE
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description IPAK-3
Manufacturer Package Code 369AR
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 35 Weeks, 4 Days
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 160 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 9.4 A
Drain-source On Resistance-Max 0.185 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 38 W
Pulsed Drain Current-Max (IDM) 37.6 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQU11P06TU

This table gives cross-reference parts and alternative options found for FQU11P06TU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU11P06TU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQU11P06TU P-Channel QFET® MOSFET -60V, -9.4A, 185mΩ, TO251 (IPAK) MOLDED,3 LEAD, 5040/RAIL Fairchild Semiconductor Corporation FQU11P06TU vs FQU11P06TU
FQU11P06TU 9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 Rochester Electronics LLC FQU11P06TU vs FQU11P06TU
Part Number Description Manufacturer Compare
SFU9024 Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation FQU11P06TU vs SFU9024
FQU11P06TU 9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 Rochester Electronics LLC FQU11P06TU vs FQU11P06TU
FQU11P06TU P-Channel QFET® MOSFET -60V, -9.4A, 185mΩ, TO251 (IPAK) MOLDED,3 LEAD, 5040/RAIL Fairchild Semiconductor Corporation FQU11P06TU vs FQU11P06TU
FQU17P06TU 12A, 60V, 0.135ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 Rochester Electronics LLC FQU11P06TU vs FQU17P06TU
FQU17P06TU P-Channel QFET® MOSFET -60V, -12A, 135mΩ, TO251 (IPAK) MOLDED,3 LEAD, 5040/RAIL Fairchild Semiconductor Corporation FQU11P06TU vs FQU17P06TU
FQU17P06TU Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, IPAK, 5040-TUBE onsemi FQU11P06TU vs FQU17P06TU
STD10PF06-1 10A, 60V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA, IPAK-3 STMicroelectronics FQU11P06TU vs STD10PF06-1
FQU17P06 Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation FQU11P06TU vs FQU17P06
SFU2955 Power Field-Effect Transistor, 7.6A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Samsung Semiconductor FQU11P06TU vs SFU2955

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