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Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, IPAK, 5040-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
17M6300
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Newark | P Channel Mosfet, -60V, 9.4A, Ipak, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:9.4A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Onsemi FQU11P06TU Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 7 |
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$0.3380 / $0.4600 | Buy Now |
DISTI #
82C4386
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Newark | P Channel Mosfet, -60V, 9.4A, Ipak, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:9.4A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Onsemi FQU11P06TU Min Qty: 5040 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
|
Ameya Holding Limited | Min Qty: 70 | 60 |
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$0.8075 / $0.8971 | Buy Now |
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FQU11P06TU
onsemi
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Datasheet
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Compare Parts:
FQU11P06TU
onsemi
Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, IPAK, 5040-TUBE
|
Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | IPAK-3 | |
Manufacturer Package Code | 369AR | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 35 Weeks, 4 Days | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 160 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 9.4 A | |
Drain-source On Resistance-Max | 0.185 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251 | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 38 W | |
Pulsed Drain Current-Max (IDM) | 37.6 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FQU11P06TU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU11P06TU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FQU11P06TU | P-Channel QFET® MOSFET -60V, -9.4A, 185mΩ, TO251 (IPAK) MOLDED,3 LEAD, 5040/RAIL | Fairchild Semiconductor Corporation | FQU11P06TU vs FQU11P06TU |
FQU11P06TU | 9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | Rochester Electronics LLC | FQU11P06TU vs FQU11P06TU |