Part Details for SFU2955 by Samsung Semiconductor
Overview of SFU2955 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for SFU2955
SFU2955 CAD Models
SFU2955 Part Data Attributes:
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SFU2955
Samsung Semiconductor
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Datasheet
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SFU2955
Samsung Semiconductor
Power Field-Effect Transistor, 7.6A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Package Description | IN-LINE, R-PSIP-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 99 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 7.6 A | |
Drain-source On Resistance-Max | 0.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 32 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SFU2955
This table gives cross-reference parts and alternative options found for SFU2955. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SFU2955, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SFU9024 | Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | SFU2955 vs SFU9024 |
FQU11P06TU | 9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | Rochester Electronics LLC | SFU2955 vs FQU11P06TU |
FQU11P06TU | P-Channel QFET® MOSFET -60V, -9.4A, 185mΩ, TO251 (IPAK) MOLDED,3 LEAD, 5040/RAIL | Fairchild Semiconductor Corporation | SFU2955 vs FQU11P06TU |
FQU17P06TU | 12A, 60V, 0.135ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | Rochester Electronics LLC | SFU2955 vs FQU17P06TU |
FQU17P06TU | P-Channel QFET® MOSFET -60V, -12A, 135mΩ, TO251 (IPAK) MOLDED,3 LEAD, 5040/RAIL | Fairchild Semiconductor Corporation | SFU2955 vs FQU17P06TU |
FQU17P06TU | Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, IPAK, 5040-TUBE | onsemi | SFU2955 vs FQU17P06TU |
STD10PF06-1 | 10A, 60V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA, IPAK-3 | STMicroelectronics | SFU2955 vs STD10PF06-1 |
FQU17P06 | Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | SFU2955 vs FQU17P06 |