Datasheets
FDC636P by:

Small Signal Field-Effect Transistor, 2.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

Part Details for FDC636P by Fairchild Semiconductor Corporation

Overview of FDC636P by Fairchild Semiconductor Corporation

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Part Details for FDC636P

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FDC636P Part Data Attributes:

FDC636P Fairchild Semiconductor Corporation
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FDC636P Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 2.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT
Package Description SUPERSOT-6
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 2.8 A
Drain-source On Resistance-Max 0.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 45 pF
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDC636P

This table gives cross-reference parts and alternative options found for FDC636P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC636P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDC636P 2800mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 Rochester Electronics LLC FDC636P vs FDC636P
Part Number Description Manufacturer Compare
SI6926ADQ-T1-E3 TRANSISTOR 4100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET General Purpose Small Signal Vishay Siliconix FDC636P vs SI6926ADQ-T1-E3
LS5909 Small Signal Field-Effect Transistor, Linear Integrated Systems FDC636P vs LS5909
FDC636P 2800mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 Rochester Electronics LLC FDC636P vs FDC636P
SVN66AK Small Signal Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE Solitron Devices Inc FDC636P vs SVN66AK
BSD840NL6327 Small Signal Field-Effect Transistor, 0.88A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-6 Infineon Technologies AG FDC636P vs BSD840NL6327
FDS6910 7500mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 Rochester Electronics LLC FDC636P vs FDS6910
2N5909 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78, Solitron Devices Inc FDC636P vs 2N5909
SDF509 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, Solitron Devices Inc FDC636P vs SDF509
SI3441BDV-T1-E3 Small Signal Field-Effect Transistor, 2.45A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 Vishay Intertechnologies FDC636P vs SI3441BDV-T1-E3
TPC6007-H TRANSISTOR 5000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, THIN, 2-3T1A, 6 PIN, FET General Purpose Small Signal Toshiba America Electronic Components FDC636P vs TPC6007-H

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