FDC636P vs SI3441BDV-T1-E3 feature comparison

FDC636P Fairchild Semiconductor Corporation

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SI3441BDV-T1-E3 Vishay Intertechnologies

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP VISHAY INTERTECHNOLOGY INC
Part Package Code SOT
Package Description SUPERSOT-6 TSOP-6
Pin Count 6
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 2.8 A 2.45 A
Drain-source On Resistance-Max 0.13 Ω 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 45 pF
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 6 6
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 1.6 W 1.25 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 5 1
Samacsys Manufacturer Vishay

Compare FDC636P with alternatives

Compare SI3441BDV-T1-E3 with alternatives