Part Details for SI3441BDV-T1-E3 by Vishay Intertechnologies
Overview of SI3441BDV-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI3441BDV-T1-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2.45A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2316 |
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$0.2600 / $1.0000 | Buy Now |
Part Details for SI3441BDV-T1-E3
SI3441BDV-T1-E3 CAD Models
SI3441BDV-T1-E3 Part Data Attributes:
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SI3441BDV-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI3441BDV-T1-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 2.45A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | TSOP-6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 2.45 A | |
Drain-source On Resistance-Max | 0.09 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.25 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for SI3441BDV-T1-E3
This table gives cross-reference parts and alternative options found for SI3441BDV-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3441BDV-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SDF504 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, | Solitron Devices Inc | SI3441BDV-T1-E3 vs SDF504 |
IFN421 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78 | InterFET Corporation | SI3441BDV-T1-E3 vs IFN421 |
LS5907 | Small Signal Field-Effect Transistor, | Linear Integrated Systems | SI3441BDV-T1-E3 vs LS5907 |
NTUD3127CT5G | 160mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 527AA-01, 6 PIN | Rochester Electronics LLC | SI3441BDV-T1-E3 vs NTUD3127CT5G |
SI3459BDV-T1-E3 | Small Signal Field-Effect Transistor, 0.0022A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, ROHS COMPLIANT, TSOP-6 | Vishay Intertechnologies | SI3441BDV-T1-E3 vs SI3459BDV-T1-E3 |
SI3433CDV-T1-GE3 | Small Signal Field-Effect Transistor, 5.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 | Vishay Intertechnologies | SI3441BDV-T1-E3 vs SI3433CDV-T1-GE3 |
NDS8926/D84Z | 5500mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Texas Instruments | SI3441BDV-T1-E3 vs NDS8926/D84Z |
2N5907 | TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, HERMETIC SEALED, TO-78, 6 PIN, FET General Purpose Small Signal | Micross Components | SI3441BDV-T1-E3 vs 2N5907 |
U423 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, 0.022 X 0.022 INCH, DIE-6 | Solitron Devices Inc | SI3441BDV-T1-E3 vs U423 |
SDF509 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, | Solitron Devices Inc | SI3441BDV-T1-E3 vs SDF509 |