Datasheets
BLW50F by:

RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, FM-4

Part Details for BLW50F by Advanced Semiconductor Inc

Overview of BLW50F by Advanced Semiconductor Inc

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Applications Industrial Automation Telecommunications

Price & Stock for BLW50F

Part # Distributor Description Stock Price Buy
DISTI # 974-BLW50F
Mouser Electronics RF Bipolar Transistors RF Transistor RoHS: Compliant 0
  • 10 $77.1600
  • 25 $73.6100
  • 50 $71.9900
  • 100 $69.8000
$69.8000 / $77.1600 Order Now

Part Details for BLW50F

BLW50F Part Data Attributes:

BLW50F Advanced Semiconductor Inc
Buy Now Datasheet
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BLW50F Advanced Semiconductor Inc RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, FM-4
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description FLANGE MOUNT, O-CRFM-F4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Advanced Semiconductor, Inc.
Collector Current-Max (IC) 3.25 A
Collector-Base Capacitance-Max 100 pF
Collector-Emitter Voltage-Max 55 V
Configuration SINGLE
DC Current Gain-Min (hFE) 15
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 94 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Transistor Element Material SILICON

Alternate Parts for BLW50F

This table gives cross-reference parts and alternative options found for BLW50F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLW50F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BLW50F TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-123A, 4 PIN, BIP RF Power NXP Semiconductors BLW50F vs BLW50F
Part Number Description Manufacturer Compare
BLV21 TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-123A, 4 PIN, BIP RF Power NXP Semiconductors BLW50F vs BLV21
VHB25-12S RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, STUD PACKAGE-4 Advanced Semiconductor Inc BLW50F vs VHB25-12S
VHB10-28F RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4 Advanced Semiconductor Inc BLW50F vs VHB10-28F
2N5642 VHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.380 INCH, STUD PACKAGE-4 STMicroelectronics BLW50F vs 2N5642
2N3375 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-60, TO-60, 3 PIN Motorola Semiconductor Products BLW50F vs 2N3375
TPV385 RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc BLW50F vs TPV385
TP2037 VHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC BLW50F vs TP2037
BLV57 TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-161A, 8 PIN, BIP RF Power NXP Semiconductors BLW50F vs BLV57
BLV31 RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, Advanced Semiconductor Inc BLW50F vs BLV31
HF75-50F RF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, NPN, 0.500 INCH, FM-4 Advanced Semiconductor Inc BLW50F vs HF75-50F

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