BLW50F vs BLV57 feature comparison

BLW50F Advanced Semiconductor Inc

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BLV57 NXP Semiconductors

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer ASI SEMICONDUCTOR INC NXP SEMICONDUCTORS
Package Description FLANGE MOUNT, O-CRFM-F4 FLANGE MOUNT, R-CDFM-F8
Pin Count 4 8
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Advanced Semiconductor, Inc.
Collector Current-Max (IC) 3.25 A 2 A
Collector-Base Capacitance-Max 100 pF 30 pF
Collector-Emitter Voltage-Max 55 V 27 V
Configuration SINGLE COMMON EMITTER, 2 ELEMENTS
DC Current Gain-Min (hFE) 15 15
Highest Frequency Band VERY HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F4 R-CDFM-F8
Number of Elements 1 2
Number of Terminals 4 8
Operating Temperature-Max 200 °C 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 94 W 77 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Form FLAT FLAT
Terminal Position RADIAL DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Part Package Code SOT
Manufacturer Package Code SOT161A
HTS Code 8541.29.00.75
Additional Feature HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
Case Connection ISOLATED
Power Dissipation Ambient-Max 77 W
Power Gain-Min (Gp) 8 dB
Transistor Application AMPLIFIER
Transition Frequency-Nom (fT) 2500 MHz

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