Parametric results for: BLW50F under RF Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

ISOLATED 1

6 hits Apply

Collector Current-Max (IC) (2)

2.5 A 4 3.25 A 2

Min (A) - Max (A)

6 hits Apply

100 pF 2

6 hits Apply

Collector-Emitter Voltage-Max (1)

55 V 4

6 hits Apply

Configuration (1)

SINGLE 5

6 hits Apply

DC Current Gain-Min (hFE) (2)

15.0 4 19.0 1

Min - Max

6 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 4

6 hits Apply

O-CRFM-F4 3

6 hits Apply

e0 2

6 hits Apply

Manufacturer (5)

Advanced Semiconductor Inc 2 New Jersey Semiconductor Products Inc 1 North American Philips Discrete Products Div 1 NXP Semiconductors 1 Philips Semiconductors 1

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (1)

4 3

6 hits Apply

200.0 °C 5

6 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

6 hits Apply

ROUND 3

6 hits Apply

FLANGE MOUNT 3

6 hits Apply

Active 3 Obsolete 1 Transferred 2

6 hits Apply

Polarity/Channel Type (1)

NPN 6

6 hits Apply

94 W 1

6 hits Apply

94 W 4

6 hits Apply

Surface Mount (1)

NO 5

6 hits Apply

Transition Frequency-Nom (fT) (1)

540 MHz 1

6 hits Apply