Part Details for VHB10-28F by Advanced Semiconductor Inc
Overview of VHB10-28F by Advanced Semiconductor Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for VHB10-28F
VHB10-28F CAD Models
VHB10-28F Part Data Attributes:
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VHB10-28F
Advanced Semiconductor Inc
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Datasheet
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VHB10-28F
Advanced Semiconductor Inc
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ASI SEMICONDUCTOR INC | |
| Package Description | FLANGE MOUNT, O-CRFM-F4 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | EMITTER | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Base Capacitance-Max | 15 pF | |
| Collector-Emitter Voltage-Max | 35 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 5 | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| JESD-30 Code | O-CRFM-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 13 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | FLAT | |
| Terminal Position | RADIAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for VHB10-28F
This table gives cross-reference parts and alternative options found for VHB10-28F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VHB10-28F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BLV21 | TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-123A, 4 PIN, BIP RF Power | NXP Semiconductors | VHB10-28F vs BLV21 |
| MS1003 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M111, FM-6 | Microsemi Corporation | VHB10-28F vs MS1003 |
| BLV11 | TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-123A, 4 PIN, BIP RF Power | NXP Semiconductors | VHB10-28F vs BLV11 |
| MRF226 | VHF BAND, Si, NPN, RF POWER TRANSISTOR, CASE 145A-01, 4 PIN | Motorola Mobility LLC | VHB10-28F vs MRF226 |
| TP9386 | VHF BAND, Si, NPN, RF POWER TRANSISTOR | Motorola Mobility LLC | VHB10-28F vs TP9386 |
| MRF240 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN | Motorola Semiconductor Products | VHB10-28F vs MRF240 |
| 2SC2694 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, CERAMIC, T-40, 5 PIN | Mitsubishi Electric | VHB10-28F vs 2SC2694 |
| MRF314 | RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4 | Advanced Semiconductor Inc | VHB10-28F vs MRF314 |
| MRF654 | RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, | Advanced Semiconductor Inc | VHB10-28F vs MRF654 |
| VHB25-28F | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4 | Advanced Semiconductor Inc | VHB10-28F vs VHB25-28F |