Part Details for UT2316L-AE3-R by Unisonic Technologies Co Ltd
Overview of UT2316L-AE3-R by Unisonic Technologies Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for UT2316L-AE3-R
UT2316L-AE3-R CAD Models
UT2316L-AE3-R Part Data Attributes
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UT2316L-AE3-R
Unisonic Technologies Co Ltd
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Datasheet
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UT2316L-AE3-R
Unisonic Technologies Co Ltd
Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | UNISONIC TECHNOLOGIES CO LTD | |
| Package Description | PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 3.6 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 36 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.6 W | |
| Power Dissipation-Max (Abs) | 0.6 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for UT2316L-AE3-R
This table gives cross-reference parts and alternative options found for UT2316L-AE3-R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UT2316L-AE3-R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI2316BDS-T1-GE3 | Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | Vishay Intertechnologies | UT2316L-AE3-R vs SI2316BDS-T1-GE3 |
| SSM3K324R | TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal | Toshiba America Electronic Components | UT2316L-AE3-R vs SSM3K324R |
| SI1472DH-T1-E3 | Small Signal Field-Effect Transistor, 4.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN | Vishay Siliconix | UT2316L-AE3-R vs SI1472DH-T1-E3 |
| SI1472DH-T1-GE3 | TRANSISTOR 4200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal | Vishay Siliconix | UT2316L-AE3-R vs SI1472DH-T1-GE3 |
| AO3424 | Small Signal Field-Effect Transistor, 3.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN PACKAGE-3 | Alpha & Omega Semiconductor | UT2316L-AE3-R vs AO3424 |
| SI2316BDS-T1-E3 | TRANSISTOR 3900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal | Vishay Siliconix | UT2316L-AE3-R vs SI2316BDS-T1-E3 |
| UT2316G-AE2-R | Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN AND LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | UT2316L-AE3-R vs UT2316G-AE2-R |
| AO3456 | Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Alpha & Omega Semiconductor | UT2316L-AE3-R vs AO3456 |
| SI2316BDS-T1-E3 | Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | Vishay Intertechnologies | UT2316L-AE3-R vs SI2316BDS-T1-E3 |