Datasheets
SI2316BDS-T1-E3 by:

Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN

Part Details for SI2316BDS-T1-E3 by Vishay Intertechnologies

Overview of SI2316BDS-T1-E3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SI2316BDS-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # 75M5444
Newark N-Channel 30-V (D-S) Mosfet |Vishay SI2316BDS-T1-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.2640
  • 5,000 $0.2580
  • 10,000 $0.2390
  • 20,000 $0.2220
  • 30,000 $0.2070
  • 50,000 $0.1980
$0.1980 / $0.2640 Buy Now
DISTI # SI2316BDS-T1-E3
Avnet Americas Trans MOSFET N-CH 30V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2316BDS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.2572
  • 6,000 $0.2490
  • 12,000 $0.2407
  • 18,000 $0.2310
  • 24,000 $0.2235
  • 30,000 $0.2130
  • 300,000 $0.2025
$0.2025 / $0.2572 Buy Now
DISTI # SI2316BDS-T1-E3
Avnet Americas Trans MOSFET N-CH 30V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2316BDS-T1-E3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel 0
  • 1 $0.2505
  • 10 $0.2445
  • 30 $0.2385
  • 50 $0.2250
  • 100 $0.2190
  • 250 $0.2130
  • 500 $0.2025
$0.2025 / $0.2505 Buy Now
DISTI # 781-SI2316BDS-E3
Mouser Electronics MOSFET 30V 4.5A 1.66W RoHS: Compliant 36019
  • 1 $0.5700
  • 10 $0.4920
  • 100 $0.3410
  • 500 $0.2850
  • 1,000 $0.2430
  • 3,000 $0.1870
$0.1870 / $0.5700 Buy Now
DISTI # V36:1790_09216798
Arrow Electronics Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks Date Code: 2307 Americas - 51000
  • 0 $0.1797
  • 3,000 $0.1029
  • 6,000 $0.1018
  • 9,000 $0.1008
  • 30,000 $0.1003
$0.1003 / $0.1797 Buy Now
Future Electronics Single N-Channel 30 V 0.05 Ohms Surface Mount Power Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 6000
Reel
  • 3,000 $0.1960
  • 6,000 $0.1920
  • 9,000 $0.1900
  • 12,000 $0.1880
  • 15,000 $0.1830
$0.1830 / $0.1960 Buy Now
Future Electronics Single N-Channel 30 V 0.05 Ohms Surface Mount Power Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks Container: Reel 0
Reel
  • 3,000 $0.1960
  • 6,000 $0.1920
  • 9,000 $0.1900
  • 12,000 $0.1880
  • 15,000 $0.1830
$0.1830 / $0.1960 Buy Now
DISTI # 77696947
Verical Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2307 Americas - 51000
  • 3,000 $0.1029
  • 6,000 $0.1018
  • 9,000 $0.1008
  • 30,000 $0.1003
$0.1003 / $0.1029 Buy Now
Quest Components   2053
  • 1 $0.9400
  • 107 $0.4700
  • 427 $0.3760
$0.3760 / $0.9400 Buy Now
DISTI # SI2316BDS-T1-E3
TTI MOSFET 30V 4.5A 1.66W RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 30000
In Stock
  • 3,000 $0.1950
  • 6,000 $0.1910
  • 9,000 $0.1870
  • 30,000 $0.1840
$0.1840 / $0.1950 Buy Now
DISTI # SI2316BDS-T1-E3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 4.5A, Idm: 20A Min Qty: 1 0
  • 1 $0.5420
  • 10 $0.4580
  • 25 $0.3540
  • 100 $0.3250
  • 250 $0.3020
  • 500 $0.2810
$0.2810 / $0.5420 RFQ
Chip1Cloud MOSFET N-CH 30V 4.5A SOT-23 28200
RFQ
DISTI # SI2316BDS-T1-E3
EBV Elektronik Trans MOSFET N-CH 30V 3.9A 3-Pin TO-236 T/R (Alt: SI2316BDS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SI2316BDS-T1-E3

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SI2316BDS-T1-E3 Part Data Attributes

SI2316BDS-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI2316BDS-T1-E3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TO-236, SOT-23, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 37 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.66 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI2316BDS-T1-E3

This table gives cross-reference parts and alternative options found for SI2316BDS-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2316BDS-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI2316BDS-T1-GE3 Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN Vishay Intertechnologies SI2316BDS-T1-E3 vs SI2316BDS-T1-GE3
SI2316BDS-T1-E3 TRANSISTOR 3900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal Vishay Siliconix SI2316BDS-T1-E3 vs SI2316BDS-T1-E3
Part Number Description Manufacturer Compare
SI2316BDS-T1-GE3 Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN Vishay Intertechnologies SI2316BDS-T1-E3 vs SI2316BDS-T1-GE3
SSM3K324R TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal Toshiba America Electronic Components SI2316BDS-T1-E3 vs SSM3K324R
SI1472DH-T1-E3 Small Signal Field-Effect Transistor, 4.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN Vishay Siliconix SI2316BDS-T1-E3 vs SI1472DH-T1-E3
SI1472DH-T1-GE3 TRANSISTOR 4200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal Vishay Siliconix SI2316BDS-T1-E3 vs SI1472DH-T1-GE3
AO3424 Small Signal Field-Effect Transistor, 3.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN PACKAGE-3 Alpha & Omega Semiconductor SI2316BDS-T1-E3 vs AO3424
SI2316BDS-T1-E3 TRANSISTOR 3900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal Vishay Siliconix SI2316BDS-T1-E3 vs SI2316BDS-T1-E3
UT2316G-AE2-R Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN AND LEAD FREE PACKAGE-3 Unisonic Technologies Co Ltd SI2316BDS-T1-E3 vs UT2316G-AE2-R
AO3456 Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Alpha & Omega Semiconductor SI2316BDS-T1-E3 vs AO3456

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