SI4966DY-T1-E3
vs
FDS6890AF011
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
FAIRCHILD SEMICONDUCTOR CORP
Package Description
MS-012, SOIC-8
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
20 V
Drain Current-Max (ID)
7.1 A
7.5 A
Drain-source On Resistance-Max
0.025 Ω
0.034 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
2 W
Pulsed Drain Current-Max (IDM)
40 A
20 A
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
40
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Part Package Code
SOT
Pin Count
8
Additional Feature
FAST SWITCHING
Qualification Status
Not Qualified
Transistor Application
SWITCHING
Compare SI4966DY-T1-E3 with alternatives
Compare FDS6890AF011 with alternatives