Part Details for JANTXV2N6764 by Infineon Technologies AG
Overview of JANTXV2N6764 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for JANTXV2N6764
Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 1 | 0 |
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$60.0000 | Buy Now |
Part Details for JANTXV2N6764
JANTXV2N6764 CAD Models
JANTXV2N6764 Part Data Attributes
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JANTXV2N6764
Infineon Technologies AG
Buy Now
Datasheet
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JANTXV2N6764
Infineon Technologies AG
Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TO-204, 2 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 38 A | |
Drain-source On Resistance-Max | 0.065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-204 | |
JESD-30 Code | O-MBFM-P2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 152 A | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500/543 | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for JANTXV2N6764
This table gives cross-reference parts and alternative options found for JANTXV2N6764. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6764, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF150 | 40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | STMicroelectronics | JANTXV2N6764 vs IRF150 |
JANHCA2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Infineon Technologies AG | JANTXV2N6764 vs JANHCA2N6764 |
2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Advanced Semiconductor Inc | JANTXV2N6764 vs 2N6764 |
IRF150 | Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | JANTXV2N6764 vs IRF150 |
IRF153 | Power Field-Effect Transistor, 30A I(D), 80V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN | International Rectifier | JANTXV2N6764 vs IRF153 |
IRF150 | 40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | JANTXV2N6764 vs IRF150 |
IRF150 | Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 | Vishay Siliconix | JANTXV2N6764 vs IRF150 |
JANTXV2N6764 | 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE, TO-204AE, 2 PIN | Intersil Corporation | JANTXV2N6764 vs JANTXV2N6764 |
IRF150 | Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | Motorola Semiconductor Products | JANTXV2N6764 vs IRF150 |
IRF150 | 40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | Motorola Mobility LLC | JANTXV2N6764 vs IRF150 |