Datasheets
JANHCA2N6764 by:

Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3

Part Details for JANHCA2N6764 by Infineon Technologies AG

Overview of JANHCA2N6764 by Infineon Technologies AG

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Part Details for JANHCA2N6764

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JANHCA2N6764 Part Data Attributes

JANHCA2N6764 Infineon Technologies AG
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JANHCA2N6764 Infineon Technologies AG Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description DIE-3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 150 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 38 A
Drain-source On Resistance-Max 0.055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XUUC-N3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style UNCASED CHIP
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 152 A
Qualification Status Qualified
Reference Standard MIL-19500/543G
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form NO LEAD
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for JANHCA2N6764

This table gives cross-reference parts and alternative options found for JANHCA2N6764. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANHCA2N6764, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF151 40A, 60V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 STMicroelectronics JANHCA2N6764 vs IRF151
2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Advanced Semiconductor Inc JANHCA2N6764 vs 2N6764
2N6764-QR-BR1 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited JANHCA2N6764 vs 2N6764-QR-BR1
UFN153 Power Field-Effect Transistor, 33A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) JANHCA2N6764 vs UFN153
JANTX2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) JANHCA2N6764 vs JANTX2N6764
IRF152 33A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC JANHCA2N6764 vs IRF152
IRF150-JQR-B 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited JANHCA2N6764 vs IRF150-JQR-B
JANTXV2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Motorola Semiconductor Products JANHCA2N6764 vs JANTXV2N6764
UFN151 Power Field-Effect Transistor, 40A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) JANHCA2N6764 vs UFN151
2N6764-QR-B 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited JANHCA2N6764 vs 2N6764-QR-B
Part Number Description Manufacturer Compare
JAN2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) JANHCA2N6764 vs JAN2N6764
IRF153 Power Field-Effect Transistor, 30A I(D), 80V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN International Rectifier JANHCA2N6764 vs IRF153
IRF151 Power Field-Effect Transistor, 30A I(D), 80V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN International Rectifier JANHCA2N6764 vs IRF151
JANTXV2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Omnirel Corp JANHCA2N6764 vs JANTXV2N6764
2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN Microsemi Corporation JANHCA2N6764 vs 2N6764
NES150 Power Field-Effect Transistor, 30A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN Microsemi Corporation JANHCA2N6764 vs NES150
IRF150 40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC JANHCA2N6764 vs IRF150
JANTXV2N6764 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE, TO-204AE, 2 PIN Intersil Corporation JANHCA2N6764 vs JANTXV2N6764
UFN152 Power Field-Effect Transistor, 33A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) JANHCA2N6764 vs UFN152
BUZ24 32A, 100V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited JANHCA2N6764 vs BUZ24

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