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Overview of IRFN240SMD-JQR-BR4 by TT Electronics Resistors
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Renewable Energy
CAD Models for IRFN240SMD-JQR-BR4 by TT Electronics Resistors
Part Data Attributes for IRFN240SMD-JQR-BR4 by TT Electronics Resistors
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
TT ELECTRONICS PLC
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Package Description
|
CHIP CARRIER, R-CBCC-N3
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Reach Compliance Code
|
compliant
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ECCN Code
|
EAR99
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Avalanche Energy Rating (Eas)
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450 mJ
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Case Connection
|
DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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200 V
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Drain Current-Max (ID)
|
13.9 A
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Drain-source On Resistance-Max
|
0.25 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
|
R-CBCC-N3
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JESD-609 Code
|
e4
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Number of Elements
|
1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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CERAMIC, METAL-SEALED COFIRED
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Package Shape
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RECTANGULAR
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Package Style
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CHIP CARRIER
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Polarity/Channel Type
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N-CHANNEL
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Pulsed Drain Current-Max (IDM)
|
56 A
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Qualification Status
|
Not Qualified
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Surface Mount
|
YES
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Terminal Finish
|
GOLD
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Terminal Form
|
NO LEAD
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Terminal Position
|
BOTTOM
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Transistor Element Material
|
SILICON
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Alternate Parts for IRFN240SMD-JQR-BR4
This table gives cross-reference parts and alternative options found for IRFN240SMD-JQR-BR4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFN240SMD-JQR-BR4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFN240SMD | Power Field-Effect Transistor, 13.9A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Resistors | IRFN240SMD-JQR-BR4 vs IRFN240SMD |
IRFN240R4 | 13.9A, 200V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN240SMD-JQR-BR4 vs IRFN240R4 |
JANTX2N7219U | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | Infineon Technologies AG | IRFN240SMD-JQR-BR4 vs JANTX2N7219U |
IRFN240SMDR4 | 13.9A, 200V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN240SMD-JQR-BR4 vs IRFN240SMDR4 |
IRFN240 | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | Infineon Technologies AG | IRFN240SMD-JQR-BR4 vs IRFN240 |
IRFN240 | Power Field-Effect Transistor, 13.9A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-220SM, 3 PIN | TT Electronics Resistors | IRFN240SMD-JQR-BR4 vs IRFN240 |
IRFN240 | 13.9A, 200V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN240SMD-JQR-BR4 vs IRFN240 |
IRFN240SMD-JQR-B | 13.9A, 200V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN240SMD-JQR-BR4 vs IRFN240SMD-JQR-B |
IRFN240SMD | 13.9A, 200V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN240SMD-JQR-BR4 vs IRFN240SMD |
2N7219U | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | IRFN240SMD-JQR-BR4 vs 2N7219U |