Datasheets
HGTG7N60A4D by:

600V, SMPS IGBT, 450-TUBE

Part Details for HGTG7N60A4D by onsemi

Overview of HGTG7N60A4D by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for HGTG7N60A4D

Part # Distributor Description Stock Price Buy
DISTI # 58K1595
Newark Single Igbt, 600V, 34A, Continuous Collector Current:34A, Collector Emitter Saturation Voltage:1.9V, Power Dissipation:125W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Product Range:- Rohs Compliant: Yes |Onsemi HGTG7N60A4D RoHS: Compliant Min Qty: 120 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # HGTG7N60A4D
Avnet Americas Trans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG7N60A4D) RoHS: Compliant Min Qty: 439 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube 900 Partner Stock
  • 439 $1.6872
  • 450 $1.6416
  • 880 $1.5960
  • 2,200 $1.5504
  • 4,400 $1.5048
  • 22,000 $1.4592
  • 44,000 $1.4136
$1.4136 / $1.6872 Buy Now
DISTI # HGTG7N60A4D
Avnet Americas Trans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG7N60A4D) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 82 Partner Stock
RFQ
Flip Electronics Stock, ship today 900
RFQ

Part Details for HGTG7N60A4D

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HGTG7N60A4D Part Data Attributes

HGTG7N60A4D onsemi
Buy Now Datasheet
Compare Parts:
HGTG7N60A4D onsemi 600V, SMPS IGBT, 450-TUBE
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description TO-247, 3 PIN
Manufacturer Package Code 340CK
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 34 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 85 ns
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 235 ns
Turn-off Time-Nom (toff) 205 ns
Turn-on Time-Nom (ton) 17 ns
VCEsat-Max 2.7 V

Alternate Parts for HGTG7N60A4D

This table gives cross-reference parts and alternative options found for HGTG7N60A4D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG7N60A4D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTG7N60A4D Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation HGTG7N60A4D vs HGTG7N60A4D
Part Number Description Manufacturer Compare
APT35GN120SG Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel Microchip Technology Inc HGTG7N60A4D vs APT35GN120SG
IRGBC40U Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier HGTG7N60A4D vs IRGBC40U
IXGH22N50B Insulated Gate Bipolar Transistor, 44A I(C), 500V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation HGTG7N60A4D vs IXGH22N50B
HGTP12N60D1 Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation HGTG7N60A4D vs HGTP12N60D1
HGTG30N60C3 Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation HGTG7N60A4D vs HGTG30N60C3
HGTP12N60A4 Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB ALTERNATE VERSION, 3 PIN Fairchild Semiconductor Corporation HGTG7N60A4D vs HGTP12N60A4
IRG4IBC10UDPBF Insulated Gate Bipolar Transistor, 6.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, FULL PACK-3 Infineon Technologies AG HGTG7N60A4D vs IRG4IBC10UDPBF
IXGH17N100 Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation HGTG7N60A4D vs IXGH17N100
APT30GT60BRD Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Advanced Power Technology HGTG7N60A4D vs APT30GT60BRD
IRG4BC30SPBF Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG HGTG7N60A4D vs IRG4BC30SPBF

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