Part Details for APT30GT60BRD by Advanced Power Technology
Overview of APT30GT60BRD by Advanced Power Technology
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for APT30GT60BRD
APT30GT60BRD CAD Models
APT30GT60BRD Part Data Attributes
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APT30GT60BRD
Advanced Power Technology
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Datasheet
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APT30GT60BRD
Advanced Power Technology
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | ULTRA FAST SWITCHING | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 55 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 95 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 260 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 40 ns | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 340 ns | |
| Turn-on Time-Nom (ton) | 45 ns |
Alternate Parts for APT30GT60BRD
This table gives cross-reference parts and alternative options found for APT30GT60BRD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT30GT60BRD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SGP13N60UF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | APT30GT60BRD vs SGP13N60UF |
| IRGBC40U | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | APT30GT60BRD vs IRGBC40U |
| STGW12NB60HD | 24A, 600V, N-CHANNEL IGBT, TO-247, TO-247, 3 PIN | STMicroelectronics | APT30GT60BRD vs STGW12NB60HD |
| IRG4BC40W | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | APT30GT60BRD vs IRG4BC40W |
| HGTG11N120CND_NL | Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | APT30GT60BRD vs HGTG11N120CND_NL |
| SGP07N120 | Insulated Gate Bipolar Transistor, 16.5A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | APT30GT60BRD vs SGP07N120 |
| IXGH17N100 | Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | APT30GT60BRD vs IXGH17N100 |
| IRG4IBC10UDPBF | Insulated Gate Bipolar Transistor, 6.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, FULL PACK-3 | Infineon Technologies AG | APT30GT60BRD vs IRG4IBC10UDPBF |
| IRG4BC15MDPBF | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | APT30GT60BRD vs IRG4BC15MDPBF |
| HGTP6N50E1D | Insulated Gate Bipolar Transistor, 7.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | APT30GT60BRD vs HGTP6N50E1D |