Datasheets
HGTP12N60A4 by:

Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB ALTERNATE VERSION, 3 PIN

Part Details for HGTP12N60A4 by Fairchild Semiconductor Corporation

Overview of HGTP12N60A4 by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for HGTP12N60A4

Part # Distributor Description Stock Price Buy
Bristol Electronics   800
RFQ
Rochester Electronics 24A, 600V, RUGGED, UFS SERIES N-Channel IGBT ' RoHS: Compliant Status: Obsolete Min Qty: 1 228
  • 1 $0.7280
  • 25 $0.7134
  • 100 $0.6843
  • 500 $0.6552
  • 1,000 $0.6188
$0.6188 / $0.7280 Buy Now

Part Details for HGTP12N60A4

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HGTP12N60A4 Part Data Attributes:

HGTP12N60A4 Fairchild Semiconductor Corporation
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HGTP12N60A4 Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB ALTERNATE VERSION, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220AB
Package Description TO-220AB ALTERNATE VERSION, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 54 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 95 ns
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 167 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 180 ns
Turn-on Time-Nom (ton) 33 ns

Alternate Parts for HGTP12N60A4

This table gives cross-reference parts and alternative options found for HGTP12N60A4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTP12N60A4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTP12N60A4 54A, 600V, N-CHANNEL IGBT, TO-220AB Intersil Corporation HGTP12N60A4 vs HGTP12N60A4
Part Number Description Manufacturer Compare
APT35GN120SG Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel Microchip Technology Inc HGTP12N60A4 vs APT35GN120SG
IRGBC40U Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier HGTP12N60A4 vs IRGBC40U
HGTP12N60D1 Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation HGTP12N60A4 vs HGTP12N60D1
HGTG30N60C3 Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation HGTP12N60A4 vs HGTG30N60C3
IRGBC40K Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier HGTP12N60A4 vs IRGBC40K
HGT1S12N60B3 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3 Harris Semiconductor HGTP12N60A4 vs HGT1S12N60B3
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation HGTP12N60A4 vs SGP13N60UF
1MB20D-060 Insulated Gate Bipolar Transistor, 38A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN Fuji Electric Co Ltd HGTP12N60A4 vs 1MB20D-060
IRG4BC20UPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG HGTP12N60A4 vs IRG4BC20UPBF
GT50J121 TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, 2-21F2C-3, Insulated Gate BIP Transistor Toshiba America Electronic Components HGTP12N60A4 vs GT50J121

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