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Transistors IGBTs IRG4BC30SPBF

IRG4BC30SPBF
Description: Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3

Overview of IRG4BC30SPBF by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Energy and Power Systems Electronic Manufacturing

Price & Stock for IRG4BC30SPBF by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 63J7489
Newark Single Igbt, 600V, 34A, Continuous Collector Current:34A, Collector Emitter Saturation Voltage:1.6V, Power Dissipation:100W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Msl:- Rohs Compliant: Yes |Infineon IRG4BC30SPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
Buy Now
Rochester Electronics IRG4BC30 - Discrete IGBT without Anti-Parallel Diode ' RoHS: Compliant Status: Obsolete Min Qty: 1 5370
  • 1 $1.4100
  • 25 $1.3800
  • 100 $1.3300
  • 500 $1.2700
  • 1,000 $1.2000
$1.2000 / $1.4100 Buy Now

CAD Models for IRG4BC30SPBF by Infineon Technologies AG
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Part Data Attributes for IRG4BC30SPBF by Infineon Technologies AG
Parametric Data

IRG4BC30SPBF
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
LEAD FREE PACKAGE-3
Reach Compliance Code
compliant
ECCN Code
EAR99
Date Of Intro
1997-03-18
Samacsys Manufacturer
Infineon
Case Connection
COLLECTOR
Collector Current-Max (IC)
34 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE
Fall Time-Max (tf)
590 ns
Gate-Emitter Thr Voltage-Max
6 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
100 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
1550 ns
Turn-on Time-Nom (ton)
40 ns
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  1. IRG4BC30SPBF
    Infineon Technologies AG
    Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3
    VS

Alternate Parts for IRG4BC30SPBF

This table gives cross-reference parts and alternative options found for IRG4BC30SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4BC30SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRG4BC30S Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRG4BC30SPBF vs IRG4BC30S
IRG4BC30S Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IRG4BC30SPBF vs IRG4BC30S
Part Number Description Manufacturer Compare
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRG4BC30SPBF vs SGP13N60UF
IXGH25N100U1 Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc IRG4BC30SPBF vs IXGH25N100U1
HGTP1N120CN Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation IRG4BC30SPBF vs HGTP1N120CN
HGTG18N120BN_NL Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation IRG4BC30SPBF vs HGTG18N120BN_NL
IXGH12N100A Insulated Gate Bipolar Transistor, 20A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRG4BC30SPBF vs IXGH12N100A
IXSH30N60B Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRG4BC30SPBF vs IXSH30N60B
SGW13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation IRG4BC30SPBF vs SGW13N60UF
IRG4PC50K Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IRG4BC30SPBF vs IRG4PC50K
HGT5A40N60A4D Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247ST, 3 PIN Fairchild Semiconductor Corporation IRG4BC30SPBF vs HGT5A40N60A4D
IGW25T120 Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN Infineon Technologies AG IRG4BC30SPBF vs IGW25T120

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