Datasheets
IRG4BC30SPBF by:

Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRG4BC30SPBF by Infineon Technologies AG

Overview of IRG4BC30SPBF by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Electronic Manufacturing

Price & Stock for IRG4BC30SPBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7489
Newark Single Igbt, 600V, 34A, Continuous Collector Current:34A, Collector Emitter Saturation Voltage:1.6V, Power Dissipation:100W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Msl:- Rohs Compliant: Yes |Infineon IRG4BC30SPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 85987717
Verical Trans IGBT Chip N-CH 600V 34A 100W 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Min Qty: 239 Package Multiple: 1 Date Code: 2001 Americas - 4000
  • 239 $1.5750
  • 500 $1.5125
  • 1,000 $1.4250
$1.4250 / $1.5750 Buy Now
DISTI # 85987930
Verical Trans IGBT Chip N-CH 600V 34A 100W 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Min Qty: 239 Package Multiple: 1 Date Code: 1601 Americas - 995
  • 239 $1.5750
  • 500 $1.5125
  • 1,000 $1.4250
$1.4250 / $1.5750 Buy Now
DISTI # 85986548
Verical Trans IGBT Chip N-CH 600V 34A 100W 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Min Qty: 239 Package Multiple: 1 Date Code: 1901 Americas - 375
  • 239 $1.5750
  • 500 $1.5125
  • 1,000 $1.4250
$1.4250 / $1.5750 Buy Now
Rochester Electronics IRG4BC30 - Discrete IGBT without Anti-Parallel Diode ' RoHS: Compliant Status: Obsolete Min Qty: 1 1370
  • 1 $1.3400
  • 25 $1.3100
  • 100 $1.2600
  • 500 $1.2100
  • 1,000 $1.1400
$1.1400 / $1.3400 Buy Now

Part Details for IRG4BC30SPBF

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IRG4BC30SPBF Part Data Attributes

IRG4BC30SPBF Infineon Technologies AG
Buy Now Datasheet
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IRG4BC30SPBF Infineon Technologies AG Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description LEAD FREE PACKAGE-3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Date Of Intro 1997-03-18
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 34 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 590 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1550 ns
Turn-on Time-Nom (ton) 40 ns

Alternate Parts for IRG4BC30SPBF

This table gives cross-reference parts and alternative options found for IRG4BC30SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4BC30SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRG4BC30SPBF International Rectifier Check for Price Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 IRG4BC30SPBF vs IRG4BC30SPBF
IRG4BC30S Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN IRG4BC30SPBF vs IRG4BC30S
Part Number Manufacturer Composite Price Description Compare
SGP13N60UF Fairchild Semiconductor Corporation Check for Price Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN IRG4BC30SPBF vs SGP13N60UF
IXGH38N60 IXYS Corporation Check for Price Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IRG4BC30SPBF vs IXGH38N60
MGP14N60E onsemi Check for Price 18A, 600V, N-CHANNEL IGBT, TO-220AB, CASE 221A-09, 3 PIN IRG4BC30SPBF vs MGP14N60E
APT30GP60SG Microsemi Corporation Check for Price Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, D3PAK, 3 PIN IRG4BC30SPBF vs APT30GP60SG
IRGPC30FD2 International Rectifier Check for Price Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN IRG4BC30SPBF vs IRGPC30FD2
IRG4PC40SPBF Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN IRG4BC30SPBF vs IRG4PC40SPBF
APT12GT60KR Microsemi Corporation Check for Price Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN IRG4BC30SPBF vs APT12GT60KR
HGTG20N60A4D onsemi Check for Price 600V, SMPS IGBT, TO-247-3, 450-TUBE IRG4BC30SPBF vs HGTG20N60A4D
IRG4PC40WPBF Infineon Technologies AG $1.3831 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN IRG4BC30SPBF vs IRG4PC40WPBF
IXGH22N50B IXYS Corporation Check for Price Insulated Gate Bipolar Transistor, 44A I(C), 500V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IRG4BC30SPBF vs IXGH22N50B

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