Datasheets
STD10PF06-1 by: STMicroelectronics

10A, 60V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA, IPAK-3

Part Details for STD10PF06-1 by STMicroelectronics

Overview of STD10PF06-1 by STMicroelectronics

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Price & Stock for STD10PF06-1

Part # Distributor Description Stock Price Buy
DISTI # V79:2366_17780687
Arrow Electronics Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) IPAK Tube Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 1319 Americas - 99967
  • 1 $0.5057
$0.5057 Buy Now
DISTI # V36:1790_07583444
Arrow Electronics Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) IPAK Tube Min Qty: 75 Package Multiple: 75 Lead time: 99 Weeks Date Code: 1345 Americas - 19
  • 75 $0.5184
$0.5184 Buy Now
DISTI # 26112990
Verical Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) IPAK Tube Min Qty: 12 Package Multiple: 1 Date Code: 1319 Americas - 99967
  • 12 $0.5057
$0.5057 Buy Now
DISTI # 26065715
Verical Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) IPAK Tube Min Qty: 19 Package Multiple: 19 Date Code: 1345 Americas - 19
  • 19 $0.5184
$0.5184 Buy Now
Quest Components 10 A, 60 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA 5
  • 1 $1.2939
  • 5 $1.0783
$1.0783 / $1.2939 Buy Now

Part Details for STD10PF06-1

STD10PF06-1 CAD Models

STD10PF06-1 Part Data Attributes

STD10PF06-1 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STD10PF06-1 STMicroelectronics 10A, 60V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA, IPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-251AA
Package Description IPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 125 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STD10PF06-1

This table gives cross-reference parts and alternative options found for STD10PF06-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD10PF06-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FQU11P06TU onsemi $0.4633 Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, IPAK, IPAK-3 / DPAK-3 STRAIGHT LEAD, 5040-TUBE STD10PF06-1 vs FQU11P06TU
SFU2955 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 7.6A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 STD10PF06-1 vs SFU2955
SFU9034 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 14A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET STD10PF06-1 vs SFU9034
SFU2955 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 7.6A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET STD10PF06-1 vs SFU2955
FQU11P06TU Fairchild Semiconductor Corporation Check for Price P-Channel QFET® MOSFET -60V, -9.4A, 185mΩ, TO251 (IPAK) MOLDED,3 LEAD, 5040/RAIL STD10PF06-1 vs FQU11P06TU
FQU17P06 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 STD10PF06-1 vs FQU17P06

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