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Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
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BSM15GP120
Infineon Technologies AG
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Datasheet
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BSM15GP120
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Package Description | MODULE-24 | |
Pin Count | 24 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 35 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | COMPLEX | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X24 | |
Number of Elements | 7 | |
Number of Terminals | 24 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 180 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 465 ns | |
Turn-on Time-Nom (ton) | 121 ns | |
VCEsat-Max | 2.55 V |
This table gives cross-reference parts and alternative options found for BSM15GP120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM15GP120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSM10GP120 | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-24 | Infineon Technologies AG | BSM15GP120 vs BSM10GP120 |
SKIIP21NAB12I | Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, CASE M2, 27 PIN | SEMIKRON | BSM15GP120 vs SKIIP21NAB12I |
MUBW10-12A7 | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, | Littelfuse Inc | BSM15GP120 vs MUBW10-12A7 |
SKIIP20NAB12 | Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, CASE M2, 30 PIN | SEMIKRON | BSM15GP120 vs SKIIP20NAB12 |
SKIIP22NAB12 | Insulated Gate Bipolar Transistor, 23A I(C), 1200V V(BR)CES, N-Channel, CASE M2, MINISKIIP-31 | SEMIKRON | BSM15GP120 vs SKIIP22NAB12 |
MUBW15-12A7 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, | Littelfuse Inc | BSM15GP120 vs MUBW15-12A7 |
SKIIP30NAB12 | Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, CASE M3, MINISKIIP-22 | SEMIKRON | BSM15GP120 vs SKIIP30NAB12 |