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Part Details for 2SJ349 by Toshiba America Electronic Components
Overview of 2SJ349 by Toshiba America Electronic Components
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for 2SJ349
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | Trans MOSFET P-CH Si 60V 20A 3-Pin(3+Tab) TO-220NIS / P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) | 20000 |
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Part Details for 2SJ349
2SJ349 CAD Models
2SJ349 Part Data Attributes
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2SJ349
Toshiba America Electronic Components
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Datasheet
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2SJ349
Toshiba America Electronic Components
TRANSISTOR 20 A, 60 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Part Package Code | SC-67 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 800 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.09 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 35 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2SJ349
This table gives cross-reference parts and alternative options found for 2SJ349. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SJ349, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF5305LPBF | Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | International Rectifier | 2SJ349 vs IRF5305LPBF |
| 2SJ504 | Power Field-Effect Transistor, 0.095ohm, P-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN | Hitachi Ltd | 2SJ349 vs 2SJ504 |
| MTP23P06VG | Power MOSFET 23 Amps, 60 Volts, TO-220 3 LEAD STANDARD, 50-TUBE | onsemi | 2SJ349 vs MTP23P06VG |
| FX30KMJ-06 | Power Field-Effect Transistor, 30A I(D), 60V, 0.054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, TO-220FN, 3 PIN | Powerex Power Semiconductors | 2SJ349 vs FX30KMJ-06 |
| FX30KMJ-06 | 30A, 60V, 0.092ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FN, 3 PIN | Renesas Electronics Corporation | 2SJ349 vs FX30KMJ-06 |
| MTP30P06VG | 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, CASE 221A-09, 3 PIN | onsemi | 2SJ349 vs MTP30P06VG |
| MTP30P06V | 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | 2SJ349 vs MTP30P06V |
| 2SJ218 | 0.06ohm, POWER, FET, TO-3PFM, 3 PIN | Renesas Electronics Corporation | 2SJ349 vs 2SJ218 |
| IRF5305PBF | Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | 2SJ349 vs IRF5305PBF |
| 2SJ553(L) | Power Field-Effect Transistor, 30A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 | Hitachi Ltd | 2SJ349 vs 2SJ553(L) |