Datasheets
IRF5305LPBF by:

Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

Part Details for IRF5305LPBF by International Rectifier

Overview of IRF5305LPBF by International Rectifier

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Price & Stock for IRF5305LPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 1 175
  • 1 $11.2000
  • 4 $7.2800
  • 8 $5.6000
  • 24 $5.2270
  • 49 $4.8530
  • 99 $4.5920
$4.5920 / $11.2000 Buy Now
Quest Components 31 A, 55 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA 140
  • 1 $15.0000
  • 28 $7.0000
  • 72 $6.5000
$6.5000 / $15.0000 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant Europe - 900
RFQ

Part Details for IRF5305LPBF

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IRF5305LPBF Part Data Attributes:

IRF5305LPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF5305LPBF International Rectifier Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-262AA
Package Description LEAD FREE, PLASTIC, TO-262, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 280 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF5305LPBF

This table gives cross-reference parts and alternative options found for IRF5305LPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5305LPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF5305L Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IRF5305LPBF vs IRF5305L
Part Number Description Manufacturer Compare
2SJ652 Power Field-Effect Transistor, 28A I(D), 60V, 0.0555ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, FULL PACK-3 SANYO Semiconductor Co Ltd IRF5305LPBF vs 2SJ652
MTP23P06VG 23A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, CASE 221A-09, 3 PIN Rochester Electronics LLC IRF5305LPBF vs MTP23P06VG
2SJ504 20A, 60V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FM, 3 PIN Renesas Electronics Corporation IRF5305LPBF vs 2SJ504
2SJ553(L) Power Field-Effect Transistor, 30A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 Hitachi Ltd IRF5305LPBF vs 2SJ553(L)
2SJ504 Power Field-Effect Transistor, 0.095ohm, P-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN Hitachi Ltd IRF5305LPBF vs 2SJ504
MTP30P06V 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF5305LPBF vs MTP30P06V
2SJ218 0.06ohm, POWER, FET, TO-3PFM, 3 PIN Renesas Electronics Corporation IRF5305LPBF vs 2SJ218
IRF9541 19A, 80V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF5305LPBF vs IRF9541
SFP9510 3.6A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC IRF5305LPBF vs SFP9510
2SJ553(L) 30A, 60V, 0.055ohm, P-CHANNEL, Si, POWER, MOSFET, LDPAK-3 Renesas Electronics Corporation IRF5305LPBF vs 2SJ553(L)

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